Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2507
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorHuang, W-
dc.creatorDai, J-
dc.creatorHao, JH-
dc.date.accessioned2014-12-11T08:22:38Z-
dc.date.available2014-12-11T08:22:38Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/2507-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Huang, J. Y. Dai & J. H. Hao, Appl. Phys. Lett. 97, 162905 (2010) and may be found at http://link.aip.org/link/?apl/97/162905en_US
dc.subjectBuffer layersen_US
dc.subjectGallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectSemiconductor heterojunctionsen_US
dc.subjectStrontium compoundsen_US
dc.subjectZinc compoundsen_US
dc.titleStructural and resistance switching properties of ZnO₃/ SrTiO/GaAs heterostructure grown by laser molecular beam epitaxyen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: J. Y. Daien_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume97-
dc.identifier.issue16-
dc.identifier.doi10.1063/1.3505136-
dcterms.abstractZnO thin films were epitaxially grown on (001) GaAs substrate by laser molecular beam epitaxy with SrTiO₃(STO) as a buffer layer. The interface properties of ZnO/GaAs heterostructure are greatly improved by inserting STO buffer layer. The interfacial effects on the transport and dielectric characteristics of the heterostructure have been investigated. The current-voltage characteristic of the heterostructure reveals an asymmetric and resistance switching behavior, exhibiting a temperature-dependent resistance hysteresis in the temperature range of 50–300 K. These measured properties could be attributed to the charge effect at the interface of the heterostructure.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 18 Oct. 2010, v. 97, no. 16, 162905, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2010-10-18-
dc.identifier.isiWOS:000283502100047-
dc.identifier.scopus2-s2.0-77958514584-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr55882-
dc.description.ros2010-2011 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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