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Title: Anisotropy of the electrical transport properties in a Ni₂MnGa single crystal : experiment and theory
Authors: Zeng, M
Cai, MQ
Or, DSW 
Chan, HLW 
Keywords: Ab initio calculations
Electrical conductivity
Electrical resistivity
Fermi level
Fermi surface
Ferromagnetic materials
Gallium alloys
Heat treatment
Manganese alloys
Martensitic transformations
Nickel alloys
Shape memory effects
Issue Date: 15-Apr-2010
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 Apr. 2010, v. 107, no. 8, 083713, p. 1-5 How to cite?
Journal: Journal of applied physics 
Abstract: Electrical transport properties in ferromagnetic shape memory Ni–Mn–Ga single crystal have been investigated both in experiment and theory by analyzing electrical resistivity along different crystallographic directions during heating. The experimental results show a clear first-order martensitic transformation and a large anisotropic resistivity AR of 23.7% at the tetragonal martensitic phase. The theoretical conductivity (σ=1/p), estimated using first-principles calculations combined with classical Boltzman transport theory, proves essential crystallographic anisotropic resistivity (AR=31%) in the martensitic phase and agrees well with experimental results. The AR in the martensitic phase is reveled to mainly originate from the splitting of the minority-spin Ni 3d and Ga 4p states near the Fermi level and hence reconstruction of the minority-spin Fermi surface upon martensitic transformation.
ISSN: 0021-8979 (print)
1089-7550 (online)
DOI: 10.1063/1.3354105
Rights: © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. Zeng et al., J. Appl. Phys. 107, 083713 (2010) and may be found at
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