Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/2493
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Electrical Engineering | - |
dc.contributor | Department of Applied Physics | - |
dc.creator | Zeng, M | - |
dc.creator | Cai, MQ | - |
dc.creator | Or, DSW | - |
dc.creator | Chan, HLW | - |
dc.date.accessioned | 2014-12-11T08:27:03Z | - |
dc.date.available | 2014-12-11T08:27:03Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/2493 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. Zeng et al., J. Appl. Phys. 107, 083713 (2010) and may be found at http://link.aip.org/link/?jap/107/083713 | en_US |
dc.subject | Ab initio calculations | en_US |
dc.subject | Electrical conductivity | en_US |
dc.subject | Electrical resistivity | en_US |
dc.subject | Fermi level | en_US |
dc.subject | Fermi surface | en_US |
dc.subject | Ferromagnetic materials | en_US |
dc.subject | Gallium alloys | en_US |
dc.subject | Heat treatment | en_US |
dc.subject | Manganese alloys | en_US |
dc.subject | Martensitic transformations | en_US |
dc.subject | Nickel alloys | en_US |
dc.subject | Shape memory effects | en_US |
dc.title | Anisotropy of the electrical transport properties in a Ni₂MnGa single crystal : experiment and theory | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: Siu Wing Or | en_US |
dc.description.otherinformation | Author name used in this publication: Helen Lai Wa Chan | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 5 | - |
dc.identifier.volume | 107 | - |
dc.identifier.issue | 8 | - |
dc.identifier.doi | 10.1063/1.3354105 | - |
dcterms.abstract | Electrical transport properties in ferromagnetic shape memory Ni–Mn–Ga single crystal have been investigated both in experiment and theory by analyzing electrical resistivity along different crystallographic directions during heating. The experimental results show a clear first-order martensitic transformation and a large anisotropic resistivity AR of 23.7% at the tetragonal martensitic phase. The theoretical conductivity (σ=1/p), estimated using first-principles calculations combined with classical Boltzman transport theory, proves essential crystallographic anisotropic resistivity (AR=31%) in the martensitic phase and agrees well with experimental results. The AR in the martensitic phase is reveled to mainly originate from the splitting of the minority-spin Ni 3d and Ga 4p states near the Fermi level and hence reconstruction of the minority-spin Fermi surface upon martensitic transformation. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 15 Apr. 2010, v. 107, no. 8, 083713, p. 1-5 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2010-04-15 | - |
dc.identifier.isi | WOS:000277303200055 | - |
dc.identifier.scopus | 2-s2.0-77952356672 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r45193 | - |
dc.description.ros | 2009-2010 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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JApplPhys_107_083713.pdf | 440.5 kB | Adobe PDF | View/Open |
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