Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/11236
Title: Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
Authors: Yau, HM
Yan, ZB
Chan, NY
Au, K
Wong, CM
Leung, CW 
Zhang, FY
Gao, XS
Dai, JY 
Issue Date: 2015
Source: Scientific reports, 4 2015, v. 5, no. , p. 1-8
Abstract: Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.
Publisher: Nature Publishing Group
Journal: Scientific reports 
EISSN: 2045-2322
DOI: 10.1038/srep12826
Rights: This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
The following publication Yau, H., Yan, Z., Chan, N. et al. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions. Sci Rep 5, 12826 (2015) is available at https://dx.doi.org/10.1038/srep12826
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