Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/11236
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Yau, HM | - |
dc.creator | Yan, ZB | - |
dc.creator | Chan, NY | - |
dc.creator | Au, K | - |
dc.creator | Wong, CM | - |
dc.creator | Leung, CW | - |
dc.creator | Zhang, FY | - |
dc.creator | Gao, XS | - |
dc.creator | Dai, JY | - |
dc.date.accessioned | 2015-10-13T08:28:19Z | - |
dc.date.available | 2015-10-13T08:28:19Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/11236 | - |
dc.language.iso | en | en_US |
dc.publisher | Nature Publishing Group | en_US |
dc.rights | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ | en_US |
dc.rights | The following publication Yau, H., Yan, Z., Chan, N. et al. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions. Sci Rep 5, 12826 (2015) is available at https://dx.doi.org/10.1038/srep12826 | en_US |
dc.title | Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 5 | - |
dc.identifier.doi | 10.1038/srep12826 | - |
dcterms.abstract | Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Scientific reports, 4 2015, v. 5, no. , p. 1-8 | - |
dcterms.isPartOf | Scientific reports | - |
dcterms.issued | 2015 | - |
dc.identifier.scopus | 2-s2.0-84938632994 | - |
dc.identifier.pmid | 26239505 | - |
dc.identifier.eissn | 2045-2322 | - |
dc.identifier.rosgroupid | 2015002419 | - |
dc.description.ros | 2015-2016 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Yau_Low-field_Switching_Four-state.pdf | 3.28 MB | Adobe PDF | View/Open |
Page views
113
Last Week
1
1
Last month
Citations as of Apr 21, 2024
Downloads
50
Citations as of Apr 21, 2024
SCOPUSTM
Citations
23
Last Week
0
0
Last month
0
0
Citations as of Apr 19, 2024
WEB OF SCIENCETM
Citations
20
Last Week
0
0
Last month
0
0
Citations as of Apr 25, 2024
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.