Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/99794
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dc.contributorDepartment of Applied Physicsen_US
dc.contributorResearch Institute for Smart Energyen_US
dc.creatorYan, Sen_US
dc.creatorXu, Cen_US
dc.creatorZhong, Cen_US
dc.creatorChen, Yen_US
dc.creatorChe, Xen_US
dc.creatorLuo, Xen_US
dc.creatorZhu, Yen_US
dc.date.accessioned2023-07-21T01:07:24Z-
dc.date.available2023-07-21T01:07:24Z-
dc.identifier.issn1433-7851en_US
dc.identifier.urihttp://hdl.handle.net/10397/99794-
dc.language.isoenen_US
dc.publisherWiley-VCHen_US
dc.rights© 2023 The Authors. Angewandte Chemie International Edition published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution Non-Commercial NoDerivs License (https://creativecommons.org/licenses/by-nc-nd/4.0/), which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.en_US
dc.rightsThe following publication S. Yan, C. Xu, C. Zhong, Y. Chen, X. Che, X. Luo, Y. Zhu, Angew. Chem. Int. Ed. 2023, 62, e202300302; Angew. Chem. 2023, 135, e202300302 is available at https://doi.org/10.1002/anie.202300302.en_US
dc.subject2D Materialsen_US
dc.subjectChalcogenidesen_US
dc.subjectFerroelectric Materialsen_US
dc.subjectPhase Stabilityen_US
dc.subjectSurface Oxidationen_US
dc.titlePhase instability in van der Waals In₂ Se₃ determined by surface coordinationen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume62en_US
dc.identifier.issue17en_US
dc.identifier.doi10.1002/anie.202300302en_US
dcterms.abstractvan der Waals In₂Se₃ has attracted significant attention for its room-temperature 2D ferroelectricity/antiferroelectricity down to monolayer thickness. However, instability and potential degradation pathway in 2D In₂Se₃ have not yet been adequately addressed. Using a combination of experimental and theoretical approaches, we here unravel the phase instability in both α- and β′-In₂Se₃ originating from the relatively unstable octahedral coordination. Together with the broken bonds at the edge steps, it leads to moisture-facilitated oxidation of In₂Se₃ in air to form amorphous In₂Se₃−₃ₓO₃ₓ layers and Se hemisphere particles. Both O₂ and H₂O are required for such surface oxidation, which can be further promoted by light illumination. In addition, the self-passivation effect from the In₂Se₃−₃ₓO₃ₓ layer can effectively limit such oxidation to only a few nanometer thickness. The achieved insight paves way for better understanding and optimizing 2D In₂Se₃ performance for device applications.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAngewandte chemie international edition, 17 Apr. 2023, v. 62, no. 17, e202300302en_US
dcterms.isPartOfAngewandte chemie international editionen_US
dcterms.issued2023-04-17-
dc.identifier.scopus2-s2.0-85150361578-
dc.identifier.pmid36861653-
dc.identifier.eissn1521-3773en_US
dc.identifier.artne202300302en_US
dc.description.validate202307 bcww_202404 bcwhen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumbera2313, OA_TA-
dc.identifier.SubFormID47473-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextHong Kong Polytechnic University; National Natural Science Foundation of China; National Natural Science Foundation of Guangdong Province, China; Fundamental Research Funds for the Central Universities, Sun Yat-sen Universityen_US
dc.description.pubStatusPublisheden_US
dc.description.TAWiley (2024)en_US
dc.description.oaCategoryTAen_US
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