Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/98449
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dc.contributorDepartment of Industrial and Systems Engineeringen_US
dc.contributorDepartment of Biomedical Engineeringen_US
dc.contributorDepartment of Applied Physicsen_US
dc.contributorDepartment of Industrial and Systems Engineering-
dc.contributorResearch Institute for Advanced Manufacturing-
dc.contributorDepartment of Biomedical Engineering-
dc.contributorDepartment of Applied Physics-
dc.creatorWong, CHen_US
dc.creatorYeung, YMen_US
dc.creatorZhao, Xen_US
dc.creatorLaw, WCen_US
dc.creatorTang, CYen_US
dc.creatorMak, CLen_US
dc.creatorLeung, CWen_US
dc.creatorShi, Len_US
dc.creatorLortz, Ren_US
dc.date.accessioned2023-05-04T06:45:32Z-
dc.date.available2023-05-04T06:45:32Z-
dc.identifier.issn2079-4991en_US
dc.identifier.urihttp://hdl.handle.net/10397/98449-
dc.language.isoenen_US
dc.publisherMolecular Diversity Preservation International (MDPI)en_US
dc.rights© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).en_US
dc.rightsThe following publication Wong, C. H., Yeung, Y. M., Zhao, X., Law, W. C., Tang, C. Y., Mak, C. L., ... & Lortz, R. (2023). A Simulation of the Effect of External and Internal Parameters on the Synthesis of a Carbyne with More than 6000 Atoms for Emerging Continuously Tunable Energy Barriers in CNT-Based Transistors. Nanomaterials, 13(6), 1048 is available at https://doi.org/10.3390/nano13061048.en_US
dc.subjectCarbyneen_US
dc.subjectCarbon nanotubeen_US
dc.subjectMonte Carlo simulationsen_US
dc.titleA simulation of the effect of external and internal parameters on the synthesis of a carbyne with more than 6000 atoms for emerging continuously tunable energy barriers in CNT-based transistorsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume13en_US
dc.identifier.issue6en_US
dc.identifier.doi10.3390/nano13061048en_US
dcterms.abstractTransistors made up of carbon nanotube CNT have demonstrated excellent current–voltage characteristics which outperform some high-grade silicon-based transistors. A continuously tunable energy barrier across semiconductor interfaces is desired to make the CNT-based transistors more robust. Despite that the direct band gap of the carbyne inside a CNT can be widely tuned by strain, the size of the carbyne cannot be controlled easily. The production of a monoatomic chain with more than 6000 carbon atoms is an enormous technological challenge. To predict the optimal chain length of a carbyne in different molecular environments, we have developed a Monte Carlo model in which a finite-length carbyne with a size of 4000–15,000 atoms is encapsulated by a CNT at finite temperatures. Our simulation shows that the stability of the carbyne@nanotube is strongly influenced by the nature and porosity of the CNT, the external pressure, the temperature, and the chain length. We have observed an initiation of the chain-breaking process in a compressed carbyne@nanotube. Our work provides much-needed input for optimizing the carbyne length to produce carbon chains much longer than 6000 atoms at ~300 K. Design rules are proposed for synthesizing ~1% strained carbyne@(6,5)CNT as a component in CNT-based transistors to tune the energy barriers continuously.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationNanomaterials, Mar. 2023, v. 13, no. 6, 1048en_US
dcterms.isPartOfNanomaterialsen_US
dcterms.issued2023-03-
dc.identifier.isiWOS:000960052500001-
dc.identifier.pmid36985943-
dc.identifier.artn1048en_US
dc.description.validate202305 bckwen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Others-
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe Hong Kong Polytechnic University through University Grants Committee; The National Natural Science Foundation of China; Fundamental Research Funds for the Central Universities, Sun Yat-sen Universityen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
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