Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/96255
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physicsen_US
dc.creatorTsai, MLen_US
dc.creatorTu, WCen_US
dc.creatorTang, Len_US
dc.creatorWei, TCen_US
dc.creatorWei, WRen_US
dc.creatorLau, SPen_US
dc.creatorChen, LJen_US
dc.creatorHe, JHen_US
dc.date.accessioned2022-11-14T04:07:10Z-
dc.date.available2022-11-14T04:07:10Z-
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://hdl.handle.net/10397/96255-
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.rights© 2015 American Chemical Societyen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Lett., copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.5b03814.en_US
dc.subjectGrapheneen_US
dc.subjectHeterojunctionen_US
dc.subjectPhotovoltaicen_US
dc.subjectQuantum doten_US
dc.subjectSolar cellsen_US
dc.titleEfficiency enhancement of silicon heterojunction solar cells via photon management using graphene quantum dot as downconvertersen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage309en_US
dc.identifier.epage313en_US
dc.identifier.volume16en_US
dc.identifier.issue1en_US
dc.identifier.doi10.1021/acs.nanolett.5b03814en_US
dcterms.abstractBy employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultrahigh efficiency photovoltaic cells in the future.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationNano letters, 13 Jan. 2016, v. 16, no. 1, p. 309-313en_US
dcterms.isPartOfNano lettersen_US
dcterms.issued2016-01-13-
dc.identifier.scopus2-s2.0-84957596301-
dc.identifier.eissn1530-6992en_US
dc.description.validate202211 bcwwen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberRGC-B3-0272, AP-0810-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Natural Science Foundation of Chinaen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS6614690-
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
Efficiency_Enhancement_SilicHeterojunctiSolar.pdfPre-Published version674.07 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Final Accepted Manuscript
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

76
Last Week
0
Last month
Citations as of Sep 22, 2024

Downloads

86
Citations as of Sep 22, 2024

SCOPUSTM   
Citations

116
Citations as of Sep 26, 2024

WEB OF SCIENCETM
Citations

105
Citations as of Sep 26, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.