Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/96252
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | en_US |
dc.creator | Yuan, F | en_US |
dc.creator | Zhang, Z | en_US |
dc.creator | Liu, C | en_US |
dc.creator | Zhou, F | en_US |
dc.creator | Yau, HM | en_US |
dc.creator | Lu, W | en_US |
dc.creator | Qiu, X | en_US |
dc.creator | Wong, HSP | en_US |
dc.creator | Dai, J | en_US |
dc.creator | Chai, Y | en_US |
dc.date.accessioned | 2022-11-14T04:07:08Z | - |
dc.date.available | 2022-11-14T04:07:08Z | - |
dc.identifier.issn | 1936-0851 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/96252 | - |
dc.language.iso | en | en_US |
dc.publisher | American Chemical Society | en_US |
dc.rights | © 2017 American Chemical Society | en_US |
dc.rights | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsnano.7b00783. | en_US |
dc.subject | Conducting bridge random access memory | en_US |
dc.subject | Conducting filament | en_US |
dc.subject | In situ transmission electron microscopy | en_US |
dc.subject | Nonvolatile memory | en_US |
dc.subject | Resistive switching memory | en_US |
dc.title | Real-time observation of the electrode-size-dependent evolution dynamics of the conducting filaments in a SiO2 layer | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Title on author’s file: Real-time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in CBRAM | en_US |
dc.identifier.spage | 4097 | en_US |
dc.identifier.epage | 4104 | en_US |
dc.identifier.volume | 11 | en_US |
dc.identifier.issue | 4 | en_US |
dc.identifier.doi | 10.1021/acsnano.7b00783 | en_US |
dcterms.abstract | Conducting bridge random access memory (CBRAM) is one of the most promising candidates for future nonvolatile memories. It is important to understand the scalability and retention of CBRAM cells to realize better memory performance. Here, we directly observe the switching dynamics of Cu tip/SiO2/W cells with various active electrode sizes using in situ transmission electron microscopy. Conducting filaments (CFs) grow from the active electrode (Cu tip) to inert electrode (W) during the SET operations. The size of the Cu tip affects the electric-field distribution, the amount of the cation injection into electrolyte, and the dimension of the CF. This study provides helpful understanding on the relationship between power consumption and retention of CBRAM cells. We also construct a theoretical model to explain the electrode-size-dependent CF growth in SET operations, showing good agreement with our experimental results. | en_US |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | ACS nano, 25 Apr. 2017, v. 11, no. 4, p. 4097-4104 | en_US |
dcterms.isPartOf | ACS nano | en_US |
dcterms.issued | 2017-04-25 | - |
dc.identifier.scopus | 2-s2.0-85018630024 | - |
dc.identifier.pmid | 28319363 | - |
dc.identifier.eissn | 1936-086X | en_US |
dc.description.validate | 202211 bcww | en_US |
dc.description.oa | Accepted Manuscript | en_US |
dc.identifier.FolderNumber | RGC-B3-0328 | - |
dc.description.fundingSource | RGC | en_US |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | The Hong Kong Polytechnic University; National Natural Science Foundation of China | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | Green (AAM) | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Yuan_Real-time_Observation_Evolution.pdf | Pre-Published version | 2.18 MB | Adobe PDF | View/Open |
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