Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/95709
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | en_US |
dc.creator | Gong, X | en_US |
dc.creator | Feng, M | en_US |
dc.creator | Wu, H | en_US |
dc.creator | Zhou, H | en_US |
dc.creator | Suen, C | en_US |
dc.creator | Zou, H | en_US |
dc.creator | Guo, L | en_US |
dc.creator | Zhou, K | en_US |
dc.creator | Chen, S | en_US |
dc.creator | Dai, J | en_US |
dc.creator | Wang, G | en_US |
dc.creator | Zhou, X | en_US |
dc.date.accessioned | 2022-10-05T03:55:31Z | - |
dc.date.available | 2022-10-05T03:55:31Z | - |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/95709 | - |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | © 2020 Elsevier B.V. All rights reserved. | en_US |
dc.rights | © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/. | en_US |
dc.rights | The following publication Gong, X., Feng, M., Wu, H., Zhou, H., Suen, C., Zou, H., ... & Zhou, X. (2021). Highly (1 0 0)-orientated SnSe thin films deposited by pulsed-laser deposition. Applied Surface Science, 535, 147694 is available at https://doi.org/10.1016/j.apsusc.2020.147694. | en_US |
dc.subject | Angle-resolved polarized Raman spectra | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | SnSe | en_US |
dc.subject | Thermal annealing | en_US |
dc.subject | Thin films | en_US |
dc.title | Highly (100)-orientated SnSe thin films deposited by pulsed-laser deposition | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 535 | en_US |
dc.identifier.doi | 10.1016/j.apsusc.2020.147694 | en_US |
dcterms.abstract | This work aims at improving the quality of the highly (100)-orientated SnSe thin films for thermoelectric applications. The as-deposited films were obtained by controlling the basic parameters including target-to-substrate distance, deposition time and growth temperature through pulsed-laser deposition. The films quality was further improved by vacuum thermal annealing. The microstructure and crystalline structure of the films were studied by X-ray photoelectron spectroscopy, X-ray diffraction, electron probe micro-analyzer, electron back-scatter diffraction, atomic force microscope and Raman spectroscopy. The SnSe thin films grown on SiO2/Si substrate at 673 K followed by thermal annealing at 673 K for 30 min show the best crystal quality and uniform orientation with mirror-like surface, and the corresponding Seebeck coefficient and power factor are about 383 μV/K and 15.4 μW/m⋅K2, respectively. Angle resolved polarized Raman spectroscopy proved that the surface of the SnSe films is the b-c plane with preferred (100) orientation crystalline over a large area, providing an important way to prepare thermoelectric thin film devices by pulse laser deposition. | en_US |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied surface science, 1 Jan. 2021, v. 535, 147694 | en_US |
dcterms.isPartOf | Applied surface science | en_US |
dcterms.issued | 2021-01-01 | - |
dc.identifier.scopus | 2-s2.0-85090198942 | - |
dc.identifier.eissn | 1873-5584 | en_US |
dc.identifier.artn | 147694 | en_US |
dc.description.validate | 202210 bcfc | en_US |
dc.description.oa | Accepted Manuscript | en_US |
dc.identifier.FolderNumber | AP-0086 | - |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | The National Natural Science Foundation of China; The Fundamental Research Funds for the Central Universities; Key Research Program of Frontier Sciences, CAS; Natural Science Foundation of Chongqing, China; The Starting Research Fund from the Chongqing University | en_US |
dc.description.pubStatus | Published | en_US |
dc.identifier.OPUS | 50348149 | - |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Suen_Highly_Thin_Films.pdf | Pre-Published version | 2.47 MB | Adobe PDF | View/Open |
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