Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/95704
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Liu, Q | en_US |
dc.creator | Xue, Q | en_US |
dc.creator | Wang, Y | en_US |
dc.creator | Wei, X | en_US |
dc.creator | Hao, J | en_US |
dc.date.accessioned | 2022-10-05T03:55:29Z | - |
dc.date.available | 2022-10-05T03:55:29Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/95704 | - |
dc.language.iso | en | en_US |
dc.publisher | John Wiley & Sons | en_US |
dc.rights | © 2021 Wiley-VCH GmbH | en_US |
dc.rights | This is the peer reviewed version of the following article: Liu, Q., Xue, Q., Wang, Y., Wei, X., & Hao, J. (2021). Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching. Advanced Electronic Materials, 7(3), 2000902, which has been published in final form at https://doi.org/10.1002/aelm.202000902. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited. | en_US |
dc.subject | Bifunctional devices | en_US |
dc.subject | Breakdown strength | en_US |
dc.subject | Energy storage | en_US |
dc.subject | Oxide interfaces | en_US |
dc.subject | Resistive switching | en_US |
dc.title | Bifunctional device with high-energy storage density and ultralow current analog resistive switching | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 7 | en_US |
dc.identifier.issue | 3 | en_US |
dc.identifier.doi | 10.1002/aelm.202000902 | en_US |
dcterms.abstract | A bifunctional device capable of simultaneously achieving dielectric energy storage and resistive switching is first designed and fabricated based on a conventional metal–insulator–metal (MIM) structure. Typically, Al/TaOx/Pt structure shows a high breakdown strength up to 5.07 MV cm−1 and a relatively high-energy density of 27.6 J cm−3. Meanwhile, the leakage current of the MIM structure is at the sub-nanoampere level and exhibits the typical characteristic of analog switching under an applied voltage of about 12 volts. The energy density and the switching current in the developed integrated MIM structure are comparable to the corresponding performances in discrete binary oxides capacitors with linear dielectric and oxide-based memristors, respectively. Furthermore, synaptic functions with short-term and long-term plasticities can be realized. Both of the device properties are found to be correlated to the role of the AlOx interfacial layer between the Al electrode and the dielectric layer, which provides the possibility of coupling between these two functions coexisting in the MIM structure. The prototypical bifunctional device offers a great prospect for multifunctional energy and neuromorphic applications. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Advanced electronic materials, Mar. 2021, v. 7, no. 3, 2000902 | en_US |
dcterms.isPartOf | Advanced electronic materials | en_US |
dcterms.issued | 2021-03 | - |
dc.identifier.scopus | 2-s2.0-85099745162 | - |
dc.identifier.eissn | 2199-160X | en_US |
dc.identifier.artn | 2000902 | en_US |
dc.description.validate | 202210 bcfc | - |
dc.description.oa | Accepted Manuscript | en_US |
dc.identifier.FolderNumber | AP-0066 | - |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | The National Natural Science Foundation of China ; The Sichuan Science and Technology Program ; The Project of State Key Laboratory of Environment-Friendly Energy Materials, Southwest University of Science and Technology | en_US |
dc.description.pubStatus | Published | en_US |
dc.identifier.OPUS | 50668117 | - |
dc.description.oaCategory | Green (AAM) | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Hao_Bifunctional_Device_High-Energy.pdf | Pre-Published version | 1.55 MB | Adobe PDF | View/Open |
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