Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/95700
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | en_US |
dc.creator | Luo, S | en_US |
dc.creator | Liao, K | en_US |
dc.creator | Lei, P | en_US |
dc.creator | Jiang, T | en_US |
dc.creator | Chen, S | en_US |
dc.creator | Xie, Q | en_US |
dc.creator | Luo, W | en_US |
dc.creator | Huang, W | en_US |
dc.creator | Yuan, S | en_US |
dc.creator | Jie, W | en_US |
dc.creator | Hao, J | en_US |
dc.date.accessioned | 2022-10-05T03:55:28Z | - |
dc.date.available | 2022-10-05T03:55:28Z | - |
dc.identifier.issn | 2040-3364 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/95700 | - |
dc.language.iso | en | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.rights | This journal is © The Royal Society of Chemistry 2021 | en_US |
dc.rights | The following publication Luo, S., Liao, K., Lei, P., Jiang, T., Chen, S., Xie, Q., ... & Hao, J. (2021). A synaptic memristor based on two-dimensional layered WSe 2 nanosheets with short-and long-term plasticity. Nanoscale, 13(13), 6654-6660 is available at https://doi.org/10.1039/d0nr08725d | en_US |
dc.title | A synaptic memristor based on two-dimensional layered WSe₂ nanosheets with short- and long-term plasticity | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Title on author’s file: Synaptic memristor based on two-dimensional layered WSe2nanosheets with short- And long-term plasticity | en_US |
dc.identifier.spage | 6654 | en_US |
dc.identifier.epage | 6660 | en_US |
dc.identifier.volume | 13 | en_US |
dc.identifier.issue | 13 | en_US |
dc.identifier.doi | 10.1039/d0nr08725d | en_US |
dcterms.abstract | Neural synapses with diverse synaptic functions of short- and long-term plasticity are highly desired for developing complex neuromorphic systems. A memristor with its two terminals serving as pre- and post-neurons, respectively, can emulate two neuronal-based synaptic functions. In this work, multilayer two-dimensional (2D) layered WSe₂ nanosheets are synthesized by a salt-assisted chemical vapor deposition (CVD) method. Two-terminal memristors with a planar structure are fabricated based on the CVD-grown triangular WSe₂ nanosheets. The fabricated devices exhibit typical bipolar nonvolatile resistive switching behaviors with a high current ON/OFF ratio of up to 6 × 103 and good retention and endurance properties, suggesting good stability and reliability of the WSe₂-based memristors. Furthermore, the developed memristors demonstrate synaptic functions of short- and long-term plasticity (STP and LTP), as well as a transition from STP to LTP by applying consecutive pulse voltages. Moreover, the WSe₂-based memristors exhibits biological synaptic functions of long-term potentiation and depression, and paired-pulse facilitation. Thus, our 2D WSe₂ nanosheet based memristors not only exhibit stable and reliable nonvolatile resistive switching behaviors, but also show potential applications in mimicking biological synapses. | en_US |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Nanoscale, 7 Apr. 2021, v. 13, no. 13, p. 6654-6660 | en_US |
dcterms.isPartOf | Nanoscale | en_US |
dcterms.issued | 2021-04 | - |
dc.identifier.scopus | 2-s2.0-85103904915 | - |
dc.identifier.pmid | 33885544 | - |
dc.identifier.eissn | 2040-3372 | en_US |
dc.description.validate | 202210 bcfc | en_US |
dc.description.oa | Accepted Manuscript | en_US |
dc.identifier.FolderNumber | AP-0051 | - |
dc.description.fundingSource | RGC | en_US |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | The National Natural Science Foundation of China; The Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices ; the Sichuan Youth Science and Technology Foundation | en_US |
dc.description.pubStatus | Published | en_US |
dc.identifier.OPUS | 50667047 | - |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Yuan_Synaptic_Memristor_Based.pdf | Pre-Published version | 1.29 MB | Adobe PDF | View/Open |
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