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http://hdl.handle.net/10397/95693
Title: | Large-scale growth of few-layer two-dimensional black phosphorus | Authors: | Wu, Z Lyu, Y Zhang, Y Ding, R Zheng, B Yang, Z Lau, SP Chen, XH Hao, J |
Issue Date: | Sep-2021 | Source: | Nature materials, Sept. 2021, v. 20, no. 9, p. 1203-1209 | Abstract: | Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness1–4. However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The unique plasma-activated region induced by laser ablation provides highly desirable conditions for BP cluster formation and transportation5,6, facilitating growth. Furthermore, we fabricated large-scale field-effect transistor arrays on BP films, yielding appealing hole mobility of up to 213 and 617 cm2 V−1 s−1 at 295 and 250 K, respectively. Our results pave the way for further developing BP-based wafer-scale devices with potential applications in the information industry. | Publisher: | Nature Publishing Group | Journal: | Nature materials | ISSN: | 1476-1122 | EISSN: | 1476-4660 | DOI: | 10.1038/s41563-021-01001-7 | Rights: | © The Author(s), under exclusive licence to Springer Nature Limited 2021 This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1038/s41563-021-01001-7. |
Appears in Collections: | Journal/Magazine Article |
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Large-Scale_Growth_Few-Layer.pdf | Pre-Published version | 1.03 MB | Adobe PDF | View/Open |
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