Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/95645
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | en_US |
dc.creator | Cai, S | en_US |
dc.creator | Dai, J | en_US |
dc.creator | Shao, Z | en_US |
dc.creator | Rothmann, MU | en_US |
dc.creator | Jia, Y | en_US |
dc.creator | Gao, C | en_US |
dc.creator | Hao, M | en_US |
dc.creator | Pang, S | en_US |
dc.creator | Wang, P | en_US |
dc.creator | Lau, SP | en_US |
dc.creator | Zhu, K | en_US |
dc.creator | Berry, JJ | en_US |
dc.creator | Herz, LM | en_US |
dc.creator | Zeng, XC | en_US |
dc.creator | Zhou, Y | en_US |
dc.date.accessioned | 2022-09-27T02:46:31Z | - |
dc.date.available | 2022-09-27T02:46:31Z | - |
dc.identifier.issn | 0002-7863 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/95645 | - |
dc.language.iso | en | en_US |
dc.publisher | American Chemical Society | en_US |
dc.rights | © 2022 American Chemical Society | en_US |
dc.rights | This is an open access article under the CC-BY 4.0 license (https://creativecommons.org/licenses/by/4.0/). | en_US |
dc.rights | The following publication Cai, S., Dai, J., Shao, Z., Rothmann, M. U., Jia, Y., Gao, C., ... & Zhou, Y. (2022). Atomically resolved electrically active intragrain interfaces in perovskite semiconductors. Journal of the American Chemical Society, 144(4), 1910-1920 is available at https://doi.org/10.1021/jacs.1c12235. | en_US |
dc.title | Atomically resolved electrically active intragrain interfaces in perovskite semiconductors | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1910 | en_US |
dc.identifier.epage | 1920 | en_US |
dc.identifier.volume | 144 | en_US |
dc.identifier.issue | 4 | en_US |
dc.identifier.doi | 10.1021/jacs.1c12235 | en_US |
dcterms.abstract | Deciphering the atomic and electronic structures of interfaces is key to developing state-of-The-Art perovskite semiconductors. However, conventional characterization techniques have limited previous studies mainly to grain-boundary interfaces, whereas the intragrain-interface microstructures and their electronic properties have been much less revealed. Herein using scanning transmission electron microscopy, we resolved the atomic-scale structural information on three prototypical intragrain interfaces, unraveling intriguing features clearly different from those from previous observations based on standalone films or nanomaterial samples. These intragrain interfaces include composition boundaries formed by heterogeneous ion distribution, stacking faults resulted from wrongly stacked crystal planes, and symmetrical twinning boundaries. The atomic-scale imaging of these intragrain interfaces enables us to build unequivocal models for the ab initio calculation of electronic properties. Our results suggest that these structure interfaces are generally electronically benign, whereas their dynamic interaction with point defects can still evoke detrimental effects. This work paves the way toward a more complete fundamental understanding of the microscopic structure-property-performance relationship in metal halide perovskites. | en_US |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of the American Chemical Society, 2 Feb. 2022, v. 144, no. 4, p. 1910-1920 | en_US |
dcterms.isPartOf | Journal of the American Chemical Society | en_US |
dcterms.issued | 2022-02-02 | - |
dc.identifier.scopus | 2-s2.0-85123638315 | - |
dc.identifier.pmid | 35060705 | - |
dc.identifier.ros | 2021002081 | - |
dc.identifier.eissn | 1520-5126 | en_US |
dc.description.validate | 202209 bchy | en_US |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | CDCF_2021-2022, a1746 | - |
dc.identifier.SubFormID | 45869 | - |
dc.description.fundingSource | RGC | en_US |
dc.description.fundingSource | Others | en_US |
dc.description.fundingText | Hong Kong Baptist University (HKBU); Hong Kong Polytechnic University; National Natural Science Foundation of China; Nanjing University; Hong Kong Ph.D. Fellowship Scheme; University of Nebraska-Lincoln; UNL Holland Computing Center; Alliance for Sustainable Energy, LLC, for the U.S. Department of Energy (DOE); Solar Energy Technologies Office (SETO) | en_US |
dc.description.pubStatus | Published | en_US |
dc.identifier.OPUS | 61607464 | - |
dc.description.oaCategory | CC | en_US |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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Cai_Atomically_Resolved_Electrically.pdf | 6.98 MB | Adobe PDF | View/Open |
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