Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/95260
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dc.contributorDepartment of Applied Biology and Chemical Technologyen_US
dc.creatorSun, Men_US
dc.creatorHuang, Ben_US
dc.date.accessioned2022-09-14T08:32:53Z-
dc.date.available2022-09-14T08:32:53Z-
dc.identifier.issn0020-1669en_US
dc.identifier.urihttp://hdl.handle.net/10397/95260-
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.rights© 2017 American Chemical Societyen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Inorganic Chemistry, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.inorgchem.7b00683.en_US
dc.title“Energy selection channels” for high-performance electrolyte : anion-Frenkel defect pair as dominant source for O ion conductions in pyrochlore-type lanthanide hafnium oxides SOFCen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage7975en_US
dc.identifier.epage7984en_US
dc.identifier.volume56en_US
dc.identifier.issue14en_US
dc.identifier.doi10.1021/acs.inorgchem.7b00683en_US
dcterms.abstractThe excellent ion conductivities of pyrochlore-type materials are believed to be based on oxygen anion transportations caused by the intrinsic defects, in which the anion Frenkel (a-Fr) pair (VO+IO) defect is the most stable one that lacks detailed study. The partially disordered pyrochlore with formation of the a-Fr pair defect will result in more disorder in local pyrochlore structure and increase number of possible migration paths for oxygen anions, which could further improve the ion conductivities of materials. Hence, we studied the formation of a-Fr defect pairs in La2Hf2O7 as a representative pyrochlore structure by density functional theory (DFT) calculations. Three types of defect migration sites were discovered with the ability to incorporate interstitial oxygen atoms from 48f sites and form a-Fr defect pairs (IO+VO (48f)). Besides the most stable vacant 8a sites with lowest defect formation energy of 3.49 eV/pair, two other novel migration sites have been first reported with ability to form a-Fr pair defect with formation energies of 6.53 and 8.49 eV/pair, respectively. These two new types of migration path, as intermediate sites, could construct a diffuse channel with vacant 8a site for interstitial oxygen anions diffusion in the lattice and significantly decrease the distance and barrier of each jump for oxygen atoms. In contrast with the oxygen interstitial defects, the formation of a-Fr pair defect shows higher priority because of much lower formation energies. Since oxygen anions could be easier to generate and diffuse in the pyrochlore structure, the a-Fr pair defect can be explained as the origin of excellent ion conductivities of pyrochlore materials. This work provides a detailed understanding of relationship between intrinsic defects and electronic properties, which enable us to predict electronic properties of other pyrochlore-type materials in the future study.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationInorganic chemistry, 17 July 2017, v. 56, no. 14, p. 7975-7984en_US
dcterms.isPartOfInorganic chemistryen_US
dcterms.issued2017-07-17-
dc.identifier.scopus2-s2.0-85024386203-
dc.identifier.pmid28682062-
dc.description.validate202209 bckwen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberRGC-B2-1386, ABCT-0637en_US
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNatural Science Foundation of China (NSFC) for the Youth Scientist grant; initial start-up grant support from the Department General Research Fund (Dept. GRF) from ABCT in the Hong Kong Polytechnic University; Shenzhen Fundamental Research Project; Scientific Research Starting Foundation for the Youth Scholars of Shenzhen Universityen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS6762304en_US
dc.description.oaCategoryGreen (AAM)en_US
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