Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/94853
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorLi, ZZen_US
dc.creatorLi, TFen_US
dc.creatorLam, CHen_US
dc.creatorYou, JQen_US
dc.date.accessioned2022-08-30T07:33:11Z-
dc.date.available2022-08-30T07:33:11Z-
dc.identifier.issn2469-9926en_US
dc.identifier.urihttp://hdl.handle.net/10397/94853-
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.rights©2019 American Physical Societyen_US
dc.rightsThe following publication Collective quantum phase slips in multiple nanowire junctions Zeng-Zhao Li, Tie-Fu Li, Chi-Hang Lam, and J. Q. You Phys. Rev. A 99, 012309 – Published 8 January 2019 is available at https://dx.doi.org/10.1103/PhysRevA.99.012309.en_US
dc.titleCollective quantum phase slips in multiple nanowire junctionsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume99en_US
dc.identifier.issue1en_US
dc.identifier.doi10.1103/PhysRevA.99.012309en_US
dcterms.abstractRealization of robust coherent quantum phase slips represents a significant experimental challenge. Here we propose a design consisting of multiple nanowire junctions to realize a phase-slip flux qubit. It admits good tunability provided by gate voltages applied on superconducting islands separating nanowire junctions. In addition, the gates and junctions can be identical to or distinct from each other, leading to symmetric and asymmetric setups. We find that the asymmetry can improve the performance of the proposed device compared with the symmetric case. In particular, it can enhance the effective rate of collective quantum phase slips. Furthermore, we demonstrate how to couple two such devices via a mutual inductance. This is potentially useful for quantum gate operations. Our investigation on how symmetry in multiple nanowire junctions affects the device performance should be useful for the application of phase-slip flux qubits in quantum information processing and quantum metrology.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationPhysical review A, v. 99, no. 1, 12309en_US
dcterms.isPartOfPhysical review Aen_US
dcterms.issued2019-01-
dc.identifier.scopus2-s2.0-85059814229-
dc.identifier.eissn2469-9934en_US
dc.identifier.artn12309en_US
dc.description.validate202208 bcchen_US
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumbera1336, AP-0391-
dc.identifier.SubFormID44629-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe National Key Research and Development Program of China ; The National Natural Science Foundation of Chinaen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS21437914-
dc.description.oaCategoryVoR alloweden_US
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