Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/88364
DC Field | Value | Language |
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dc.contributor | Department of Applied Physics | - |
dc.creator | Jiang, J | - |
dc.creator | Zou, X | - |
dc.creator | Lv, Y | - |
dc.creator | Liu, Y | - |
dc.creator | Xu, W | - |
dc.creator | Tao, Q | - |
dc.creator | Chai, Y | - |
dc.creator | Liao, L | - |
dc.date.accessioned | 2020-10-29T01:02:43Z | - |
dc.date.available | 2020-10-29T01:02:43Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/88364 | - |
dc.language.iso | en | en_US |
dc.publisher | Nature Publishing Group | en_US |
dc.rights | This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. | en_US |
dc.rights | The following publication Jiang, J., Zou, X., Lv, Y. et al. Rational design of Al2O3/2D perovskite heterostructure dielectric for high performance MoS2 phototransistors. Nat Commun 11, 4266 (2020), is available at https://doi.org/10.1038/s41467-020-18100-9 | en_US |
dc.title | Rational design of Al2O3/2D perovskite heterostructure dielectric for high performance MoS2 phototransistors | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 11 | - |
dc.identifier.issue | 1 | - |
dc.identifier.doi | 10.1038/s41467-020-18100-9 | - |
dcterms.abstract | Two-dimensional (2D) Ruddlesden-Popper perovskites are currently drawing significant attention as highly-stable photoactive materials for optoelectronic applications. However, the insulating nature of organic ammonium layers in 2D perovskites results in poor charge transport and limited performance. Here, we demonstrate that Al2O3/2D perovskite heterostructure can be utilized as photoactive dielectric for high-performance MoS2 phototransistors. The type-II band alignment in 2D perovskites facilitates effective spatial separation of photo-generated carriers, thus achieving ultrahigh photoresponsivity of >108 A/W at 457 nm and >106 A/W at 1064 nm. Meanwhile, the hysteresis loops induced by ionic migration in perovskite and charge trapping in Al2O3 can neutralize with each other, leading to low-voltage phototransistors with negligible hysteresis and improved bias stress stability. More importantly, the recombination of photo-generated carriers in 2D perovskites depends on the external biasing field. With an appropriate gate bias, the devices exhibit wavelength-dependent constant photoresponsivity of 103–108 A/W regardless of incident light intensity. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Nature communications, 2020, v. 11, no. 1, 4266 | - |
dcterms.isPartOf | Nature communications | - |
dcterms.issued | 2020 | - |
dc.identifier.scopus | 2-s2.0-85089908074 | - |
dc.identifier.eissn | 2041-1723 | - |
dc.identifier.artn | 4266 | - |
dc.description.validate | 202010 bcma | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_Scopus/WOS | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | CC | en_US |
Appears in Collections: | Journal/Magazine Article |
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Jiang_Rational_design_Al2O3.pdf | 1.76 MB | Adobe PDF | View/Open |
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