Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/88185
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorZhao, YQ-
dc.creatorTang, LB-
dc.creatorYang, SY-
dc.creatorLau, SP-
dc.creatorTeng, KS-
dc.date.accessioned2020-09-18T02:13:31Z-
dc.date.available2020-09-18T02:13:31Z-
dc.identifier.issn1931-7573-
dc.identifier.urihttp://hdl.handle.net/10397/88185-
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.rights© The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.en_US
dc.rightsThe following publication Zhao, Y. Q., Tang, L. B., Yang, S. Y., Lau, S. P., & Teng, K. S. (2020). Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction. Nanoscale Research Letters, 15, 1-6 is available at https://dx.doi.org/10.1186/s11671-020-03336-7en_US
dc.subjectGeTeen_US
dc.subjectHeterojunctionen_US
dc.subjectOptoelectronic characteristicsen_US
dc.subjectPhotovoltaic detectoren_US
dc.titleInfrared photovoltaic detector based on p-GeTe/n-Si heterojunctionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage6-
dc.identifier.volume15-
dc.identifier.doi10.1186/s11671-020-03336-7-
dcterms.abstractGeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 x 10(11)Jones at 850 nm light irradiation at room temperature was demonstrated.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationNanoscale research letters, 2020, v. 15, 138, p. 1-6-
dcterms.isPartOfNanoscale research letters-
dcterms.issued2020-
dc.identifier.isiWOS:000546152300002-
dc.identifier.scopus2-s2.0-85087103092-
dc.identifier.pmid32601898-
dc.identifier.eissn1556-276X-
dc.identifier.artn138-
dc.description.validate202009 bcrc-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_Scopus/WOSen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryCCen_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
Zhao_Infrared_Photovoltaic_Detector.pdf1.52 MBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

84
Last Week
0
Last month
Citations as of Sep 22, 2024

Downloads

19
Citations as of Sep 22, 2024

SCOPUSTM   
Citations

11
Citations as of Sep 26, 2024

WEB OF SCIENCETM
Citations

11
Citations as of Sep 26, 2024

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.