Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/8426
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dc.contributorDepartment of Applied Physics-
dc.creatorSu, SC-
dc.creatorZhu, H-
dc.creatorZhang, LX-
dc.creatorHe, M-
dc.creatorZhao, LZ-
dc.creatorYu, SF-
dc.creatorWang, JN-
dc.creatorLing, FCC-
dc.date.accessioned2015-04-29T07:27:13Z-
dc.date.available2015-04-29T07:27:13Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/8426-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2013 AIP Publishing LLC.en_US
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in S. C. Su et al., Appl. Phys. Lett. 103, 131104 (2013) and may be found at https://dx.doi.org/10.1063/1.4822265en_US
dc.titleLow-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structureen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.volume103-
dc.identifier.issue13-
dc.identifier.doi10.1063/1.4822265-
dcterms.abstractZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with plasma assisted molecular epitaxy on c-plane sapphire, with their optical properties and optical pumped lasing characteristics studied. Due to the good crystalline quality, the lasing threshold of the MQW is ∼20 kW cm-2. The widths of the narrow well (NW) and the wide well (WW) of the ADQW were chosen to fascinate rapid LO phonon assisted carrier tunneling from NW to WW, so as to enhance the exciton density at the WW. Very low lasing threshold of 6 kW cm-2 has been achieved.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 2013, v. 103, no. 13, 131104, p. 131104-1-131104-4-
dcterms.isPartOfApplied physics letters-
dcterms.issued2013-
dc.identifier.isiWOS:000325284500004-
dc.identifier.scopus2-s2.0-84885004627-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr67770-
dc.description.ros2013-2014 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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