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Title: High-performance deep ultraviolet photodetector based on NiO/beta-Ga2O3 heterojunction
Authors: Jia, MH
Wang, F
Tang, LB
Xiang, JZ
Teng, KS
Lau, SP 
Issue Date: 2020
Source: Nanoscale research letters, 22 Feb. 2020, v. 15, 47, p. 1-6
Abstract: Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/beta-Ga2O3 heterojunction was developed and investigated. The beta-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2 over bar 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW(-1) under a 245-nm illumination (27 mu Wcm(-2)) and the maximum detectivity (D*) of 3.14 x 10(12) cmHz(1/2) W-1, which was attributed to the p-NiO/n-beta-Ga2O3 heterojunction.
Keywords: Beta-Ga2O3
UV photodetector
Publisher: Springer
Journal: Nanoscale research letters 
ISSN: 1931-7573
EISSN: 1556-276X
DOI: 10.1186/s11671-020-3271-9
Rights: © The Author(s). 2020 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (, which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
The following publication Jia, M., Wang, F., Tang, L. et al. High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction. Nanoscale Res Lett 15, 47 (2020) is available at
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