High-performance deep ultraviolet photodetector based on NiO/beta-Ga2O3 heterojunction

Abstract

Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/beta-Ga2O3 heterojunction was developed and investigated. The beta-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of (2 over bar 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW(-1) under a 245-nm illumination (27 mu Wcm(-2)) and the maximum detectivity (D*) of 3.14 x 10(12) cmHz(1/2) W-1, which was attributed to the p-NiO/n-beta-Ga2O3 heterojunction.