Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/79234
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | en_US |
dc.creator | Bai, GX | en_US |
dc.creator | Yang, ZB | en_US |
dc.creator | Lin, HH | en_US |
dc.creator | Jie, WJ | en_US |
dc.creator | Hao, JH | en_US |
dc.date.accessioned | 2018-11-05T01:45:05Z | - |
dc.date.available | 2018-11-05T01:45:05Z | - |
dc.identifier.issn | 2040-3364 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/79234 | - |
dc.language.iso | en | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.rights | This journal is © The Royal Society of Chemistry 2018 | en_US |
dc.rights | The following publication Bai, G., Yang, Z., Lin, H., Jie, W., & Hao, J. (2018). Lanthanide Yb/Er co-doped semiconductor layered WSe 2 nanosheets with near-infrared luminescence at telecommunication wavelengths. Nanoscale, 10(19), 9261-9267 is available at https://doi.org/10.1039/c8nr01139g. | en_US |
dc.title | Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 9261 | en_US |
dc.identifier.epage | 9267 | en_US |
dc.identifier.volume | 10 | en_US |
dc.identifier.issue | 19 | en_US |
dc.identifier.doi | 10.1039/c8nr01139g | en_US |
dcterms.abstract | Atomically thin layers of transition metal dichalcogenides (TMDs) have recently drawn great attention. However, doping strategies and controlled synthesis for wafer-scale TMDs are still in their early stages, greatly hindering the construction of devices and further basic studies. In this work, we develop the fast deposition of wafer-scale layered lanthanide ion Yb/Er co-doped WSe2 using pulsed laser deposition. WSe2 nanosheets were chosen as the host, while Yb3+ and E3+ ions served as the sensitizer and activator, respectively. The obtained Yb/Er co-doped WSe2 layers exhibit good uniformity and high crystallinity with highly textured features. Under the excitation of a diode laser at 980 nm, down-conversion emission is observed at around 1540 nm, assigned to the emission transition between the (4) I-13/2 and I-4(15/2) states of Er3+. Considering the significance of 1540 nm luminescence in the application of photonic technologies, this observation in the WSe2 :Yb/Er nanosheets down to the monolayer provides a new opportunity for developing photonic devices at the 2D limit. Our work not only offers a general method to prepare waferscale lanthanide doped TMD5, but also to widely modulate the luminescence of atomically layered TMD5 by introducing lanthanide ions. | en_US |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Nanoscale, 21 May 2018, v. 10, no. 19, p. 9261-9267 | en_US |
dcterms.isPartOf | Nanoscale | en_US |
dcterms.issued | 2018-05-21 | - |
dc.identifier.isi | WOS:000437007700037 | - |
dc.identifier.scopus | 2-s2.0-85047247028 | - |
dc.identifier.pmid | 29736531 | - |
dc.identifier.eissn | 2040-3372 | en_US |
dc.identifier.rosgroupid | 2017002346 | - |
dc.description.ros | 2017-2018 > Academic research: refereed > Publication in refereed journal | en_US |
dc.description.validate | 201810 bcrc | en_US |
dc.description.oa | Accepted Manuscript | en_US |
dc.identifier.FolderNumber | AP-0504 | - |
dc.description.fundingSource | RGC | en_US |
dc.description.pubStatus | Published | en_US |
dc.identifier.OPUS | 6841260 | - |
Appears in Collections: | Journal/Magazine Article |
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Bai_Lanthanide_Yb_Co-Doped.pdf | Pre-Published version | 760 kB | Adobe PDF | View/Open |
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