Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/78951
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dc.contributorDepartment of Applied Physicsen_US
dc.contributorMaterials Research Centreen_US
dc.creatorWu, Den_US
dc.creatorLou, ZHen_US
dc.creatorWang, YGen_US
dc.creatorYao, ZQen_US
dc.creatorXu, TTen_US
dc.creatorShi, ZFen_US
dc.creatorXu, JMen_US
dc.creatorTian, YTen_US
dc.creatorLi, XJen_US
dc.creatorTsang, YHen_US
dc.date.accessioned2018-10-26T01:21:50Z-
dc.date.available2018-10-26T01:21:50Z-
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://hdl.handle.net/10397/78951-
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rights© 2018 Elsevier B.V. All rights reserved.en_US
dc.rights|© 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/.en_US
dc.rightsThe following publication Wu, D., Lou, Z., Wang, Y., Yao, Z., Xu, T., Shi, Z., ... & Tsang, Y. H. (2018). Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunction. Solar Energy Materials and Solar Cells, 182, 272-280 is available at https://doi.org/10.1016/j.solmat.2018.03.017.en_US
dc.subjectMolybdenum disulfideen_US
dc.subjectHeterojunctionen_US
dc.subjectSi nanowire arraysen_US
dc.subjectPhotodetectorsen_US
dc.subjectSelf-powereden_US
dc.titlePhotovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunctionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage272en_US
dc.identifier.epage280en_US
dc.identifier.volume182en_US
dc.identifier.doi10.1016/j.solmat.2018.03.017en_US
dcterms.abstractPhotovoltaic MoS2/Si nanowire array (SiNWA) heterojunction photodetectors (PDs) are constructed and investigated, which exhibit excellent photoresponse properties to light illumination at wavelengths from the deep ultraviolet to the near-infrared. Further photoresponse analysis reveals that a high responsivity of 53.5 A/W and a specific detectivity of 2.8 x 10(13) Jones, as well as fast response speeds of 2.9/7.3 mu s at 50 kHz are achieved in a MoS2/SiNWA heterojunction device. The high performances could be attributed to the high-quality heterojunction between MoS2 and the SiNWA. Such high performances of MoS2/SiNWA PDs are much better than those of previously reported MoS2-based PDs, suggesting that MoS2/SiNWA heterojunction devices have great potential in optoelectronic applications.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationSolar energy materials and solar cells, 1 Aug. 2018, v. 182, p. 272-280en_US
dcterms.isPartOfSolar energy materials and solar cellsen_US
dcterms.issued2018-08-01-
dc.identifier.isiWOS:000432769400031-
dc.identifier.rosgroupid2017002635-
dc.description.ros2017-2018 > Academic research: refereed > Publication in refereed journalen_US
dc.description.validate201810 bcrcen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0467-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe National Natural Science Foundation of China; The China Postdoctoral Science Foundation ; The Key Projects of Higher Education in Henan Province ; The Startup Research Fund of Zhengzhou Universityen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS25440600-
dc.description.oaCategoryGreen (AAM)en_US
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