Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/76315
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Li, LB | - |
dc.creator | Zang, Y | - |
dc.creator | Hu, JC | - |
dc.creator | Lin, SH | - |
dc.creator | Chen, ZM | - |
dc.date.accessioned | 2018-05-10T02:55:45Z | - |
dc.date.available | 2018-05-10T02:55:45Z | - |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | http://hdl.handle.net/10397/76315 | - |
dc.language.iso | en | en_US |
dc.publisher | Molecular Diversity Preservation International (MDPI) | en_US |
dc.rights | © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | en_US |
dc.rights | The following publication Li, L. B., Zang, Y., Hu, J. C., Lin, S. H., & Chen, Z. M. (2017). Photoelectric properties of Si doping superlattice structure on 6H-SiC(0001). Materials, 10(6), (Suppl. ), UNSP 583, - is available at https://dx.doi.org/10.3390/ma10060583 | en_US |
dc.subject | Si | en_US |
dc.subject | 6H-SiC heterostructure | en_US |
dc.subject | Doping superlattice | en_US |
dc.subject | Photoelectric properties | en_US |
dc.subject | Chemical vapor deposition | en_US |
dc.subject | Transmission electron microscopy | en_US |
dc.title | Photoelectric properties of Si doping superlattice structure on 6H-SiC(0001) | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 10 | - |
dc.identifier.issue | 6 | - |
dc.identifier.doi | 10.3390/ma10060583 | - |
dcterms.abstract | The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 < 21-1 > at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm(2), the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm(2). Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Materials, 25 June 2017, v. 10, no. 6, 583, p. 1-6 | - |
dcterms.isPartOf | Materials | - |
dcterms.issued | 2017 | - |
dc.identifier.isi | WOS:000404415000017 | - |
dc.identifier.eissn | 1996-1944 | - |
dc.identifier.artn | UNSP 583 | - |
dc.description.validate | 201805 bcrc | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | CC | en_US |
Appears in Collections: | Journal/Magazine Article |
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File | Description | Size | Format | |
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Li_Photoelectric_Properties_Si.pdf | 1.68 MB | Adobe PDF | View/Open |
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