Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/74642
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dc.contributorDepartment of Applied Physicsen_US
dc.contributorMaterials Research Centreen_US
dc.creatorZeng, Len_US
dc.creatorLiu, Yen_US
dc.creatorLin, Sen_US
dc.creatorQarony, Wen_US
dc.creatorTao, Len_US
dc.creatorChai, Yen_US
dc.creatorZhang, Xen_US
dc.creatorLau, SPen_US
dc.creatorTsang, YHen_US
dc.date.accessioned2018-03-29T07:17:22Z-
dc.date.available2018-03-29T07:17:22Z-
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://hdl.handle.net/10397/74642-
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rights© 2017 Published by Elsevier B.V.en_US
dc.rights© 2017. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/.en_US
dc.rightsThe following publication Zeng, L., Liu, Y., Lin, S., Qarony, W., Tao, L., Chai, Y., ... & Tsang, Y. H. (2018). High photoelectrochemical activity and stability of Au-WS2/silicon heterojunction photocathode. Solar Energy Materials and Solar Cells, 174, 300-306 is available at https://doi.org/10.1016/j.solmat.2017.07.042.en_US
dc.subjectHeterojunctionen_US
dc.subjectPhotocatalysten_US
dc.subjectPhotocathodeen_US
dc.subjectWS2en_US
dc.subjectWS2/Sien_US
dc.titleHigh photoelectrochemical activity and stability of Au-WS2/silicon heterojunction photocathodeen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage300en_US
dc.identifier.epage306en_US
dc.identifier.volume174en_US
dc.identifier.doi10.1016/j.solmat.2017.07.042en_US
dcterms.abstractAlthough silicon has been widely employed as light harvesting antenna in photocatalysts due to its cost advantage, it suffers from low efficiency and poor stability due to photocorrosion of Si. To overcome this problem, a heterojunction photocathode was produced by coating a WS2 thin-film on p-type Si. Our proposed method can further improve the photocatalytic activity and stability. The homogeneous WS2 films with large surface area and tens-of-nanometers in thickness were prepared through magnetron and post-annealing process. This film not only functions as a protective layer to isolate the Si from the harsh electrochemical environment, but also forms a junction at the interface between WS2 and p-type Si to facilitate the charge separation and transport processes. Additionally, further enhancement of visible photocatalytic performance was achieved by depositing Au film on WS2/p-Si through thermal evaporation and the highest value of the photocurrent intensity achieved is up to ~ 4.5 μA/cm2 at 0 V versus Ag/AgCl. Besides, photoelectrochemical instability of WS2/p-Si electrodes can be minimized by adding Au coating. Our results suggest that adding the Au-WS2 on p-Si can benefit carrier separation and providing physical protection of the Si layer. Therefore, it can further improve the overall photocatalytic activity and stability.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationSolar energy materials and solar cells, Jan. 2018, v. 174, p. 300-306en_US
dcterms.isPartOfSolar energy materials and solar cellsen_US
dcterms.issued2018-01-
dc.identifier.scopus2-s2.0-85029515579-
dc.identifier.rosgroupid2017002606-
dc.description.ros2017-2018 > Academic research: refereed > Publication in refereed journalen_US
dc.description.validate201802 bcrcen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0559-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe Hong Kong Polytechnic Universityen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS6782704-
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