Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/73764
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dc.contributorDepartment of Applied Physicsen_US
dc.contributorUniversity Research Facility in Materials Characterization and Device Fabricationen_US
dc.creatorLin, Sen_US
dc.creatorLiu, Yen_US
dc.creatorHu, Zen_US
dc.creatorLu, Wen_US
dc.creatorMak, CHen_US
dc.creatorZeng, Len_US
dc.creatorZhao, Jen_US
dc.creatorLi, Yen_US
dc.creatorYan, Fen_US
dc.creatorTsang, YHen_US
dc.creatorZhang, Xen_US
dc.creatorLau, SPen_US
dc.date.accessioned2018-03-29T07:15:17Z-
dc.date.available2018-03-29T07:15:17Z-
dc.identifier.issn2211-2855en_US
dc.identifier.urihttp://hdl.handle.net/10397/73764-
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rights© 2017 Elsevier Ltd. All rights reserved.en_US
dc.rights© 2017. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/.en_US
dc.rightsThe following publication Lin, S., Liu, Y., Hu, Z., Lu, W., Mak, C. H., Zeng, L., ... & Lau, S. P. (2017). Tunable active edge sites in PtSe2 films towards hydrogen evolution reaction. Nano Energy, 42, 26-33 is available at https://doi.org/10.1016/j.nanoen.2017.10.038.en_US
dc.subjectActive sitesen_US
dc.subjectHydrogen evolution reactionen_US
dc.subjectLayered materialsen_US
dc.subjectPtSe2en_US
dc.titleTunable active edge sites in PtSe2 films towards hydrogen evolution reactionen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage26en_US
dc.identifier.epage33en_US
dc.identifier.volume42en_US
dc.identifier.doi10.1016/j.nanoen.2017.10.038en_US
dcterms.abstractLayered transition-metal dichalcogenides (TMDCs) have received great interest due to their potential applications in many fields including electronics, optoelectronics, electrochemical hydrogen production and so on. Recent research effort on the development of effective hydrogen evolution reaction (HER) is to modulate the active edge sites through controlling surface structure at the atomic scale. Here we firstly demonstrate a facile strategy to synthesize large-area and edge-rich platinum diselenide (PtSe2) via selenization of Pt films by magnetron sputtering physical deposition method. The edge site density of the PtSe2 can be effectively controlled by tuning the thickness of Pt films. The HER activity of the PtSe2 can be enhanced significantly as the active edge site density increases. The maximum cathodic current density of 227 mA/cm2 can be obtained through increasing the edge density, which well agrees with the density functional theory calculations. Our work provides a fundamental insight on the effect of active edge site density towards HER.en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationNano energy, Dec. 2017, v. 42, p. 26-33en_US
dcterms.isPartOfNano energyen_US
dcterms.issued2017-12-
dc.identifier.scopus2-s2.0-85031908474-
dc.identifier.eissn2211-3282en_US
dc.identifier.rosgroupid2017003199-
dc.description.ros2017-2018 > Academic research: refereed > Publication in refereed journalen_US
dc.description.validate201802 bcrcen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0584-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextThe Hong Kong Polytechnic Universityen_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS6790288-
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