Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/70789
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Title: Large-area uniform electron doping of graphene by Ag nanofilm
Authors: Guo, XP
Peng, LL
Tang, LB
Xiang, JZ
Ji, RB
Zhang, K
Luk, CM 
Lai, SK 
Wan, RM
Duan, Y
Lau, SP 
Issue Date: 2017
Source: AIP advances, 2017, v. 7, no. 4, 45209, p. 045209-1-045209-6
Abstract: Graphene has attracted much attention at various research fields due to its unique optical, electronic and mechanical properties. Up to now, graphene has not been widely used in optoelectronic fields due to the lack of large-area uniform doped graphene (n-doped and p-doped) with smooth surface. Therefore, it is rather desired to develop some effective doping methods to extend graphene to optoelectronics. Here we developed a novel doping method to prepare large-area (> centimeter scale) uniform doped graphene film with a nanoscale roughness(RMS roughness similar to 1.4 nm), the method (nano-metal film doping method) is simple but effective. Using this method electron doping (electron-injection) may be easily realized by the simple thermal deposition of Ag nano-film on a transferred CVD graphene. The doping effectiveness has been proved by Raman spectroscopy and spectroscopic ellipsometry. Importantly, our method sheds light on some potential applications of graphene in optoelectronic devices such as photodetectors, LEDs, phototransistors, solar cells, lasers etc.
Publisher: American Institute of Physics
Journal: AIP advances 
ISSN: 2158-3226
DOI: 10.1063/1.4979113
Rights: © 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
The following publication X. P. Guo et al., AIP Advances 7, 45209 (2017) is available at https://dx.doi.org/10.1063/1.4979113
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