Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/66018
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Li, X | - |
dc.creator | Yang, L | - |
dc.creator | Li, CF | - |
dc.creator | Liu, MF | - |
dc.creator | Fan, Z | - |
dc.creator | Xie, YL | - |
dc.creator | Lu, CL | - |
dc.creator | Lin, L | - |
dc.creator | Yan, ZB | - |
dc.creator | Zhang, Z | - |
dc.creator | Dai, JY | - |
dc.creator | Liu, J | - |
dc.creator | Cheong, SW | - |
dc.date.accessioned | 2017-05-22T02:09:34Z | - |
dc.date.available | 2017-05-22T02:09:34Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/66018 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2017 Author(s). | en_US |
dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. Li et al., Appl. Phys. Lett. 110, 42901 (2017) and may be found at https://dx.doi.org/10.1063/1.4974217 | en_US |
dc.title | Ultra-low coercive field of improper ferroelectric Ca3Ti2O7 epitaxial thin films | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 110 | - |
dc.identifier.issue | 4 | - |
dc.identifier.doi | 10.1063/1.4974217 | - |
dcterms.abstract | Hybrid improper ferroelectrics have their electric polarization generated by two or more combined non-ferroelectric structural distortions, such as the rotation and tilting of Ti-O octahedral in the Ca3Ti2O7 (CTO) family. In this work, we prepare the high quality (010)-oriented CTO thin films on (110) SrTiO3 (STO) substrates by pulsed laser deposition. The good epitaxial growth of the CTO thin films on the substrates with the interfacial epitaxial relationship of [001]CTO//[001]STO and [100]CTO//[-110]STO is revealed. The in-plane ferroelectric hysteresis unveils an ultralow coercive field of ∼5 kV/cm even at low temperature, nearly two orders of magnitude lower than that of bulk CTO single crystals. The huge difference between the epitaxial thin films and bulk crystals is most likely due to the lattice imperfections in the thin films rather than substrate induced lattice strains, suggesting high sensitivity of the ferroelectric properties to lattice defects. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 2017, v. 110, no. 4, 42901, p. 042901-1-042901-5 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2017 | - |
dc.identifier.isi | WOS:000392837300035 | - |
dc.identifier.scopus | 2-s2.0-85010299066 | - |
dc.identifier.ros | 2016006103 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.artn | 42901 | - |
dc.identifier.rosgroupid | 2016005844 | - |
dc.description.ros | 2016-2017 > Academic research: refereed > Publication in refereed journal | - |
dc.description.validate | 201804_a bcma | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | VoR allowed | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Li_Ultra-low_Coercive_Field.pdf | 2.13 MB | Adobe PDF | View/Open |
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