Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/65902
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Electrical Engineering | - |
dc.creator | Li, XG | - |
dc.creator | Liu, ZJ | - |
dc.creator | Xie, XY | - |
dc.creator | Kang, AG | - |
dc.creator | Fu, WN | - |
dc.date.accessioned | 2017-05-22T02:09:25Z | - |
dc.date.available | 2017-05-22T02:09:25Z | - |
dc.identifier.issn | 1687-8434 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/65902 | - |
dc.language.iso | en | en_US |
dc.publisher | Hindawi Publishing Corporation | en_US |
dc.rights | Copyright © 2016 X. G. Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. | en_US |
dc.rights | The following article: Li, X. G., Liu, Z. J., Xie, X. Y., Kang, A. G., & Fu, W. N. (2016). Influence of shape anisotropy on magnetization dynamics driven by spin hall effect. Advances in Materials Science and Engineering, 2016, is available at https//doi.org/10.1155/2016/4259846 | en_US |
dc.title | Influence of shape anisotropy on magnetization dynamics driven by spin hall effect | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 2016 | en_US |
dc.identifier.doi | 10.1155/2016/4259846 | en_US |
dcterms.abstract | As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Advances in materials science and engineering, 2016, v. 2016, 4259846 | - |
dcterms.isPartOf | Advances in materials science and engineering | - |
dcterms.issued | 2016 | - |
dc.identifier.isi | WOS:000390569900001 | - |
dc.identifier.scopus | 2-s2.0-85008668676 | - |
dc.identifier.ros | 2016006333 | - |
dc.identifier.eissn | 1687-8442 | en_US |
dc.identifier.artn | 4259846 | en_US |
dc.identifier.rosgroupid | 2016006068 | - |
dc.description.ros | 2016-2017 > Academic research: refereed > Publication in refereed journal | - |
dc.description.validate | 201804_a bcma | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | CC | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Li_Influence_Shape_Anisotropy.pdf | 3.05 MB | Adobe PDF | View/Open |
Page views
104
Last Week
1
1
Last month
Citations as of Sep 22, 2024
Downloads
92
Citations as of Sep 22, 2024
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.