Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/65832
DC Field | Value | Language |
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dc.contributor | Department of Electronic and Information Engineering | - |
dc.creator | Wang, SF | - |
dc.creator | Wang, W | - |
dc.creator | Fong, WK | - |
dc.creator | Yu, Y | - |
dc.creator | Surya, C | - |
dc.date.accessioned | 2017-05-22T02:09:19Z | - |
dc.date.available | 2017-05-22T02:09:19Z | - |
dc.identifier.uri | http://hdl.handle.net/10397/65832 | - |
dc.language.iso | en | en_US |
dc.publisher | Nature Publishing Group | en_US |
dc.rights | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ | en_US |
dc.rights | © The Author(s) 2017 | en_US |
dc.rights | The following publication Wang, S., Wang, W., Fong, W. et al. Tin Compensation for the SnS Based Optoelectronic Devices. Sci Rep 7, 39704 (2017) is available at https://dx.doi.org/10.1038/srep39704 | en_US |
dc.title | Tin compensation for the SnS based optoelectronic devices | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.volume | 7 | - |
dc.identifier.doi | 10.1038/srep39704 | - |
dcterms.abstract | In this paper we report the growth of high quality SnS thin films with good crystallinity deposited on two-dimensional (2D) mica substrates. It is believed that the 2D nature of SnS, with strong intra-layer covalent bonds and weak inter-layer van der Waals interactions, is responsible for its relative insensitivity to lattice mismatch. We also investigated the reduction of Sn vacancies in the material using Sn-compensation technique during the material growth process. The experimental results clearly demonstrated substantial enhancements in the electrical and structural properties for films deposited using Sn-compensation technique. A mobility of 51 cm2 V-1 s-1 and an XRD rocking curve full width at half maximum of 0.07° were obtained. Sn-compensated SnS/GaN:Si heterojunctions were fabricated and significant improvement in both the I-V characteristics and the spectral responsivities of the devices were characterized. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Scientific reports, 3 2017, v. 7, no. , 39704, p. 1-10 | - |
dcterms.isPartOf | Scientific reports | - |
dcterms.issued | 2017 | - |
dc.identifier.isi | WOS:000391147800001 | - |
dc.identifier.scopus | 2-s2.0-85007614643 | - |
dc.identifier.eissn | 2045-2322 | - |
dc.identifier.artn | 39704 | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | CC | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Wang_Tin_Compensation_SnS.pdf | 3.75 MB | Adobe PDF | View/Open |
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