Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/65598
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dc.contributorDepartment of Applied Physicsen_US
dc.creatorYuan, Sen_US
dc.creatorYang, Zen_US
dc.creatorXie, Cen_US
dc.creatorYan, Fen_US
dc.creatorDai, Jen_US
dc.creatorLau, SPen_US
dc.creatorChan, HLWen_US
dc.creatorHao, Jen_US
dc.date.accessioned2017-05-22T02:08:54Z-
dc.date.available2017-05-22T02:08:54Z-
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://hdl.handle.net/10397/65598-
dc.language.isoenen_US
dc.publisherWiley-VCHen_US
dc.rights© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.rightsThis is the peer reviewed version of the following article: Yuan, S., Yang, Z., Xie, C., Yan, F., Dai, J., Lau, S. P., ... & Hao, J. (2016). Ferroelectric‐driven performance enhancement of graphene field‐effect transistors based on vertical tunneling heterostructures. Advanced Materials, 28(45), 10048-10054, which has been published in final form at https://doi.org/10.1002/adma.201601489. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.en_US
dc.subject2D materialsen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectField-effect transistorsen_US
dc.subjectGrapheneen_US
dc.subjectPulsed laser depositionen_US
dc.titleFerroelectric-driven performance enhancement of graphene field-effect transistors based on vertical tunneling heterostructuresen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage10048en_US
dc.identifier.epage10054en_US
dc.identifier.volume28en_US
dc.identifier.issue45en_US
dc.identifier.doi10.1002/adma.201601489en_US
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationAdvanced materials, 7 Dec. 2016, v. 28, no. 45, p. 10048-10054en_US
dcterms.isPartOfAdvanced materialsen_US
dcterms.issued2016-12-07-
dc.identifier.isiWOS:000392725200017-
dc.identifier.scopus2-s2.0-84999751990-
dc.identifier.ros2016005791-
dc.identifier.eissn1521-4095en_US
dc.identifier.rosgroupid2016005538-
dc.description.ros2016-2017 > Academic research: refereed > Publication in refereed journalen_US
dc.description.validate201804_a bcmaen_US
dc.description.oaAccepted Manuscripten_US
dc.identifier.FolderNumberAP-0822-
dc.description.fundingSourceRGCen_US
dc.description.fundingSourceOthersen_US
dc.description.fundingTextNational Natural Science Foundation of China;The Hong Kong Polytechnic University; HKU/PolyU, HKUST Collaborative Research Funden_US
dc.description.pubStatusPublisheden_US
dc.identifier.OPUS6700714-
dc.description.oaCategoryGreen (AAM)en_US
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