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http://hdl.handle.net/10397/6237
| Title: | In-plane dielectric properties of epitaxial Ba₀.₇Sr₀.₃TiO₃ thin films grown on GaAs for tunable device application | Authors: | Yang, Z Hao, JH |
Issue Date: | 1-Sep-2012 | Source: | Journal of applied physics, 1 Sept. 2012, v. 112, no. 5, 054110, p. 1-4 | Abstract: | We have epitaxially deposited ferroelectric Ba₀.₇Sr₀.₃TiO₃ (BST) thin films grown on GaAs substrate via SrTiO₃ buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from −190 to 90 °C, indicating Curie temperature of the BST film to be around 52 °C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is found to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application | Keywords: | Barium compounds Buffer layers Curie temperature Epitaxial layers Ferroelectric thin films Molecular beam epitaxial growth Permittivity Pulsed laser deposition Strontium compounds |
Publisher: | American Institute of Physics | Journal: | Journal of applied physics | ISSN: | 0021-8979 | EISSN: | 1089-7550 | DOI: | 10.1063/1.4749270 | Rights: | © 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Yang & J. Hao, J. Appl. Phys. 112, 054110 (2012) and may be found at http://link.aip.org/link/?jap/112/054110. |
| Appears in Collections: | Journal/Magazine Article |
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|---|---|---|---|---|
| Yang_In-plane_Dielectric_Properties.pdf | 2.29 MB | Adobe PDF | View/Open |
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