Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/5897
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorWang, XL-
dc.creatorShao, Q-
dc.creatorLeung, CW-
dc.creatorRuotolo, A-
dc.date.accessioned2014-12-11T08:28:10Z-
dc.date.available2014-12-11T08:28:10Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/5897-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X. L. Wang et al., J. Appl. Phys. 113, 17C301 (2013) and may be found at http://link.aip.org/link/?jap/113/17C301en_US
dc.subjectII-VI semiconductorsen_US
dc.subjectMagnetic momentsen_US
dc.subjectManganeseen_US
dc.subjectMemristorsen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectVacancies (crystal)en_US
dc.subjectZinc compoundsen_US
dc.titleNon-volatile, reversible switching of the magnetic moment in Mn-doped ZnO filmsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume113-
dc.identifier.issue17-
dc.identifier.doi10.1063/1.4793639-
dcterms.abstractWe report on the observation of a non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO thin films. The system is a typical oxide memristor based on an oxygen-deficient semiconductor oxide. In the present study, the oxide semiconductor is ferromagnetic at room temperature. We found that the bistable switching of the resistive state was accompanied by a bistable switching of the magnetic moment at room temperature. Our results support the hypothesis that ferromagnetism in Mn-doped ZnO is mediated by oxygen-vacancies.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 7 May 2013, v. 113, no. 17, 17C301, p. 1-3-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2013-05-07-
dc.identifier.isiWOS:000319292800169-
dc.identifier.scopus2-s2.0-84877739867-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr66238-
dc.description.ros2012-2013 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
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