Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/5817
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Mechanical Engineering | - |
dc.creator | Huang, HB | - |
dc.creator | Ma, XQ | - |
dc.creator | Liu, ZH | - |
dc.creator | Zhao, CP | - |
dc.creator | Shi, SQ | - |
dc.creator | Chen, LQ | - |
dc.date.accessioned | 2014-12-11T08:23:28Z | - |
dc.date.available | 2014-12-11T08:23:28Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/5817 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H.B. Huang et al., Appl. Phys. Lett. 102, 042405 (2013) and may be found at http://link.aip.org/link/?apl/102/042405 | en_US |
dc.subject | Aluminium alloys | en_US |
dc.subject | Cobalt alloys | en_US |
dc.subject | Iron alloys | en_US |
dc.subject | Magnetic anisotropy | en_US |
dc.subject | Magnetic domain walls | en_US |
dc.subject | Magnetic switching | en_US |
dc.subject | Micromagnetics | en_US |
dc.subject | Nanomagnetics | en_US |
dc.subject | Nanostructured materials | en_US |
dc.subject | Silicon alloys | en_US |
dc.subject | Spin valves | en_US |
dc.title | Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: Shi, S. Q. | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 5 | - |
dc.identifier.volume | 102 | - |
dc.identifier.issue | 4 | - |
dc.identifier.doi | 10.1063/1.4789867 | - |
dcterms.abstract | A multilevel cell spin transfer switching process in a full-Heusler Co₂FeAl₀.₅Si₀.₅ alloy spin-valve nanopillar was investigated using micromagnetic simulations. An intermediate state of two-step spin transfer magnetization switching was reported due to the four-fold magnetocrystalline anisotropy; however, we discovered the intermediate state has two possible directions of −90° and +90°, which could not be detected in the experiments due to the same resistance of the −90° state and the +90° state. The domain structures were analyzed to determine the mechanism of domain wall motion and magnetization switching under a large current. Based on two intermediate states, we reported a multilevel bit spin transfer multi-step magnetization switching by changing the magnetic anisotropy in a full-Heusler alloy nanopillar. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 28 Jan. 2013, v. 102, no. 4, 042405, p. 1-5 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2013-01-28 | - |
dc.identifier.isi | WOS:000314723600052 | - |
dc.identifier.scopus | 2-s2.0-84873579862 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r66755 | - |
dc.description.ros | 2012-2013 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Huang_simulation_multilevel_cell.pdf | 1.72 MB | Adobe PDF | View/Open |
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