Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/575
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dc.contributorDepartment of Applied Physics-
dc.creatorDing, AL-
dc.creatorHe, XY-
dc.creatorQui, PS-
dc.creatorWang, SJ-
dc.creatorLuo, WG-
dc.creatorChan, HLW-
dc.creatorWang, P-
dc.creatorChoy, CL-
dc.date.accessioned2014-12-11T08:24:32Z-
dc.date.available2014-12-11T08:24:32Z-
dc.identifier.isbn0-7803-5940-2-
dc.identifier.urihttp://hdl.handle.net/10397/575-
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.rights© 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.rightsThis material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.subjectPZTen_US
dc.subjectThick filmen_US
dc.subjectAlkoxideen_US
dc.subjectHydrolytic producten_US
dc.titleA novel process for preparing PZT thick filmsen_US
dc.typeConference Paperen_US
dcterms.abstractA novel method for preparing PZT thick films has been developed, which integrated some advantages of common-used processes. Comparing with conventional methods, the present technology can prevent cracks, improve morphologies and properties in films, and increase an achievable thickness. The films show a dense structure and therefor uniform properties, that are comparable with those in bulk ceramics. PZT film of 3.5µm thickness has a large remanent polarization of 44µC/cm², small coercive field of 50 kV/cm, large dielectric constant of 2000 and small dielectric loss tanδ of 0.04, respectively.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationISAF 2000 : proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics, Honolulu, Hawaii, U.S.A., July 21-August 2, 2000, p. 515-518-
dcterms.issued2001-
dc.identifier.rosgroupidr04285-
dc.description.ros2000-2001 > Academic research: refereed > Refereed conference paper-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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