Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/542
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Tang, X | - |
dc.creator | Wang, J | - |
dc.creator | Zhang, YW | - |
dc.creator | Chan, HLW | - |
dc.date.accessioned | 2014-12-11T08:28:18Z | - |
dc.date.available | 2014-12-11T08:28:18Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/542 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.G. Tang et al., J. Appl. Phys. 94, 5163 (2003) and may be found at http://link.aip.org/link/?jap/94/5163 | en_US |
dc.subject | Lead compounds | en_US |
dc.subject | Calcium compounds | en_US |
dc.subject | Ferroelectric thin films | en_US |
dc.subject | Sol-gel processing | en_US |
dc.subject | Leakage currents | en_US |
dc.subject | Dielectric relaxation | en_US |
dc.subject | Space-charge-limited conduction | en_US |
dc.subject | Dielectric hysteresis | en_US |
dc.subject | MIM devices | en_US |
dc.subject | Schottky effect | en_US |
dc.subject | Ohmic contacts | en_US |
dc.subject | Ferroelectric capacitors | en_US |
dc.title | Leakage current and relaxation characteristics of highly (111)-oriented lead calcium titanate thin films | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: X. G. Tang | en_US |
dc.description.otherinformation | Author name used in this publication: J. Wang | en_US |
dc.description.otherinformation | Author name used in this publication: H. L. W. Chan | en_US |
dc.identifier.spage | 5163 | - |
dc.identifier.epage | 5166 | - |
dc.identifier.volume | 94 | - |
dc.identifier.issue | 8 | - |
dcterms.abstract | Highly (111)-oriented (Pb[sub 0.76]Ca[sub 0.24])TiO₃ (PCT) thin films were grown on Pt/Ti/SiO₂/Si substrates by a sol-gel process. The Au/PCT/Pt metal-insulator-metal film capacitor showed well-saturated hysteresis loops at an applied field of 800 kV/cm with remanent polarization (P[sub r]) and coercive electric field (E[sub c]) values of 18.2 µC/cm² and 210 kV/cm, respectively. The leakage current depended on the voltage polarity. At low electrical field and with Pt electrode biased negatively, the Pt/PCT interface exhibits a Schottky emission characteristics. The Au/PCT interface forms an ohmic contact. The conduction current when the Au electrode is biased negatively shows a space-charge-limited behavior. The dielectric relaxation current behavior of Au/PCT/Pt capacitor obeys the well-known Curie-von Schweidler law at low electric field. At higher fields, the currents have contributions to both dielectric relaxation current and leakage current. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 15 Oct. 2003, v. 94, no. 8, p.5163-5166 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2003-10-15 | - |
dc.identifier.isi | WOS:000185664300067 | - |
dc.identifier.scopus | 2-s2.0-0242272369 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r16954 | - |
dc.description.ros | 2003-2004 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | VoR allowed | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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leakage-current_03.pdf | 76.5 kB | Adobe PDF | View/Open |
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