Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/506
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorYing, Zen_US
dc.creatorYun, Pen_US
dc.creatorWang, Den_US
dc.creatorZhou, Xen_US
dc.creatorSong, ZTen_US
dc.creatorFeng, SLen_US
dc.creatorWang, Yen_US
dc.creatorChan, HLWen_US
dc.date.accessioned2014-12-11T08:28:01Z-
dc.date.available2014-12-11T08:28:01Z-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10397/506-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Ying et al. J. Appl. Phys. 101, 086101 (2007) and may be found at http://link.aip.org/link/?jap/101/086101en_US
dc.subjectBarium compoundsen_US
dc.subjectZirconiumen_US
dc.subjectFerroelectric thin filmsen_US
dc.subjectX-ray diffractionen_US
dc.subjectInternal stressesen_US
dc.subjectAtomic force microscopyen_US
dc.subjectFerroelectric Curie temperatureen_US
dc.titleFine-grained BaZr₀.₂Ti₀.₈O₃ thin films for tunable device applicationsen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1en_US
dc.identifier.epage3en_US
dc.identifier.volume101en_US
dc.identifier.doi10.1063/1.2721968en_US
dcterms.abstractA study of the structure and in-plane dielectric properties of BaZr[sub 0.2]Ti[sub 0.8]O₃ thin film epitaxially grown on (LaAlO₃)[sub 0.3](Sr₂AlTaO[sub 6])[sub 0.35] (001) single-crystal substrates through pulsed-laser deposition has been carried out. X-ray diffraction measurements revealed a good crystallinity and tensile in-plane stress in the film. Fine grains with an average size of ~20 nm were observed using atomic force microscopy. Curie temperature of the film was found to be ~120 °C, which is 100 °C higher than that of the ceramic. Butterfly-shaped C-V curve confirmed the in-plane ferroelectric state in the film. A large dielectric tunability of ~50% was found in the film.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 15 Apr. 2007, v. 101, 086101, p. 1-3en_US
dcterms.isPartOfJournal of applied physicsen_US
dcterms.issued2007-04-15-
dc.identifier.isiWOS:000246072200169-
dc.identifier.scopus2-s2.0-34247587227-
dc.identifier.eissn1089-7550en_US
dc.identifier.rosgroupidr31213-
dc.description.ros2006-2007 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRA-
dc.description.pubStatusPublisheden_US
dc.description.oaCategoryVoR alloweden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
fine-grained_07.pdf353.2 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

135
Last Week
0
Last month
Citations as of Apr 14, 2025

Downloads

91
Citations as of Apr 14, 2025

SCOPUSTM   
Citations

12
Last Week
0
Last month
0
Citations as of Jun 21, 2024

WEB OF SCIENCETM
Citations

13
Last Week
0
Last month
0
Citations as of May 8, 2025

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.