Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/502
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.contributor | Materials Research Centre | - |
dc.creator | Tang, X | en_US |
dc.creator | Liu, QX | en_US |
dc.creator | Jiang, YP | en_US |
dc.creator | Zheng, RK | en_US |
dc.creator | Chan, HLW | en_US |
dc.date.accessioned | 2014-12-11T08:27:58Z | - |
dc.date.available | 2014-12-11T08:27:58Z | - |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/10397/502 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.G. Tang et al. J. Appl. Phys. 100, 114105 (2006) and may be found at http://link.aip.org/link/?jap/100/114105 | en_US |
dc.subject | Barium compounds | en_US |
dc.subject | Dielectric thin films | en_US |
dc.subject | Permittivity | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | Crystallisation | en_US |
dc.subject | Electrodes | en_US |
dc.subject | Thin film capacitors | en_US |
dc.subject | Crystal structure | en_US |
dc.title | Enhanced dielectric properties of highly (100)-oriented Ba(Zr,Ti)O₃ thin films grown on La[sub 0.7]Sr[sub 0.3]MnO₃ bottom layer | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.identifier.spage | 1 | en_US |
dc.identifier.epage | 5 | en_US |
dc.identifier.volume | 100 | en_US |
dcterms.abstract | Barium zirconate titanate Ba(Zr[sub 0.2]Ti[sub 0.8]O₃ (BZT) thin films on La[sub 0.7]Sr[sub 0.3]MnO₃ (LSMO)-coated Si and Pt/Ti/SiO₂/Si substrates have been prepared by pulsed laser deposition and crystallized in situ at 650 °C. Four capacitor types of LSMO/BZT/LSMO/Si, Pt/BZT/LSMO/Si, Pt/BZT/Pt/Si, and Pt/BZT/LSMO/Pt/Si were prepared to investigate the structural and dielectric properties, tunability, and figure of merits. Among them, the high (100)-oriented BZT films were grown on the (100)-textured LSMO and (111)-textured Pt electrodes. The results show that the LSMO/BZT/LSMO/Si has the highest dielectric constant of 555 and Pt/BZT/LSMO/Pt/Si has the highest tunability of 73% at 1 MHz. The high dielectric constant and tunability have been attributed to the (100) texture of the LSMO bottom layer leading to the decrease of the thickness of the interface of the dead layer. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 6 Dec. 2006, v. 100, 114105, p. 1-5 | en_US |
dcterms.isPartOf | Journal of applied physics | en_US |
dcterms.issued | 2006-12-06 | - |
dc.identifier.isi | WOS:000242887400118 | - |
dc.identifier.scopus | 2-s2.0-33845788798 | - |
dc.identifier.eissn | 1089-7550 | en_US |
dc.identifier.rosgroupid | r31969 | - |
dc.description.ros | 2006-2007 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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