Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/502
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorTang, Xen_US
dc.creatorLiu, QXen_US
dc.creatorJiang, YPen_US
dc.creatorZheng, RKen_US
dc.creatorChan, HLWen_US
dc.date.accessioned2014-12-11T08:27:58Z-
dc.date.available2014-12-11T08:27:58Z-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10397/502-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.G. Tang et al. J. Appl. Phys. 100, 114105 (2006) and may be found at http://link.aip.org/link/?jap/100/114105en_US
dc.subjectBarium compoundsen_US
dc.subjectDielectric thin filmsen_US
dc.subjectPermittivityen_US
dc.subjectPulsed laser depositionen_US
dc.subjectCrystallisationen_US
dc.subjectElectrodesen_US
dc.subjectThin film capacitorsen_US
dc.subjectCrystal structureen_US
dc.titleEnhanced dielectric properties of highly (100)-oriented Ba(Zr,Ti)O₃ thin films grown on La[sub 0.7]Sr[sub 0.3]MnO₃ bottom layeren_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1en_US
dc.identifier.epage5en_US
dc.identifier.volume100en_US
dcterms.abstractBarium zirconate titanate Ba(Zr[sub 0.2]Ti[sub 0.8]O₃ (BZT) thin films on La[sub 0.7]Sr[sub 0.3]MnO₃ (LSMO)-coated Si and Pt/Ti/SiO₂/Si substrates have been prepared by pulsed laser deposition and crystallized in situ at 650 °C. Four capacitor types of LSMO/BZT/LSMO/Si, Pt/BZT/LSMO/Si, Pt/BZT/Pt/Si, and Pt/BZT/LSMO/Pt/Si were prepared to investigate the structural and dielectric properties, tunability, and figure of merits. Among them, the high (100)-oriented BZT films were grown on the (100)-textured LSMO and (111)-textured Pt electrodes. The results show that the LSMO/BZT/LSMO/Si has the highest dielectric constant of 555 and Pt/BZT/LSMO/Pt/Si has the highest tunability of 73% at 1 MHz. The high dielectric constant and tunability have been attributed to the (100) texture of the LSMO bottom layer leading to the decrease of the thickness of the interface of the dead layer.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 6 Dec. 2006, v. 100, 114105, p. 1-5en_US
dcterms.isPartOfJournal of applied physicsen_US
dcterms.issued2006-12-06-
dc.identifier.isiWOS:000242887400118-
dc.identifier.scopus2-s2.0-33845788798-
dc.identifier.eissn1089-7550en_US
dc.identifier.rosgroupidr31969-
dc.description.ros2006-2007 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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