Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4979
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dc.contributorDepartment of Applied Physics-
dc.contributorMaterials Research Centre-
dc.creatorWu, W-
dc.creatorLu, F-
dc.creatorWong, KH-
dc.creatorPang, GKH-
dc.creatorChoy, CL-
dc.creatorZhang, YH-
dc.date.accessioned2014-12-11T08:28:18Z-
dc.date.available2014-12-11T08:28:18Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4979-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. Wu et al., J. Appl. Phys. 88, 700 (2000) and may be found at http://link.aip.org/link/?jap/88/700.en_US
dc.subjectLanthanum compoundsen_US
dc.subjectStrontium compoundsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectAtomic force microscopyen_US
dc.subjectX-ray diffractionen_US
dc.subjectElectrical resistivityen_US
dc.subjectVapour phase epitaxial growthen_US
dc.subjectVacuum depositionen_US
dc.titleEpitaxial and highly electrical conductive La₀.₅Sr₀.₅TiO₃films grown by pulsed laser deposition in vacuumen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: K. H. Wongen_US
dc.description.otherinformationAuthor name used in this publication: Geoffrey Pangen_US
dc.description.otherinformationAuthor name used in this publication: C. L. Choyen_US
dc.description.otherinformationAuthor name used in this publication: Yuheng Zhangen_US
dc.identifier.spage700-
dc.identifier.epage704-
dc.identifier.volume88-
dc.identifier.issue2-
dc.identifier.doi10.1063/1.373724-
dcterms.abstractThe target material with nominal composition of La₀.₅Sr₀.₅TiO₃sintered in air is an insulator and not a single-phase compound. By pulsed laser ablation in vacuum at the multiphase La–Sr–Ti–O target, however, highly electrical conductive and epitaxial La₀.₅Sr₀.₅TiO₃films have been fabricated on LaAlO₃(001) substrates. Structural characterization using three-axis x-ray diffraction (θ–2θ scan, ω-scan rocking curve, and ϕ scan) reveals that the films have a pseudocubic structure and grow on the substrates with a parallel epitaxial relationship. Atomic force microscopy images show the films have quite smooth surface, for a film 200 nm thick, the roughness R[sub a] is about 0.31 nm over the 1 μmX1 μm area. Resistivity versus temperature measurements indicate that the films are metallic at 2–300 K and have resistivity of 64 μΩ cm at 300 K, which is about one order lower than that of the single-phase La₀.₅Sr₀.₅TiO₃bulk materials. After the same deposition procedure, epitaxial La₀.₅Sr₀.₅TiO₃films have also been grown on TiN buffered (001) Si substrates.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 15 July 2000, v. 88, no. 2, p. 700-704-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2000-07-15-
dc.identifier.isiWOS:000087889800016-
dc.identifier.scopus2-s2.0-0142111491-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr03179-
dc.description.ros2000-2001 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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