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http://hdl.handle.net/10397/4973
| Title: | Dynamic process of domain switching in ferroelectric films | Authors: | Wang, B Xia, R Fan, H Woo, CH |
Issue Date: | 1-Sep-2003 | Source: | Journal of applied physics, 1 Sept. 2003, v. 94, no. 5, p. 3384-3389 | Abstract: | In this article, a general variational formulation is established for the dynamics of domain switching in ferroelectric thin films. By incorporating the kinetic energy in the Landau free energy expansion, we obtain a second-order time-dependent Ginzburg–Landau evolution equation, which can be used to analyze the frequency-dependent dielectric and ferroelectric properties of the materials. A numerical model is developed to calculate the time-dependent polarization and electric-field distribution during the domain switching process. As an example of practical importance, a ferroelectric film with 180° domain boundaries perpendicular to the film surface is studied. Domain switching is found to proceed in two stages, the initial nucleation and growth of the ferroelectric domain, followed by the expansion of the domain through the sidewise motion of the 180° domain walls, until the spontaneous polarization in the entire electrified area is reversed. | Keywords: | Ferroelectric materials Ferroelectric thin films Electric domains Ferroelectric switching Free energy Ginzburg-Landau theory Dielectric polarisation |
Publisher: | American Institute of Physics | Journal: | Journal of applied physics | ISSN: | 0021-8979 | EISSN: | 1089-7550 | DOI: | 10.1063/1.1599958 | Rights: | © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in B. Wang et al., J. Appl. Phys. 94, 3384 (2003) and may be found at http://link.aip.org/link/?jap/94/3384. |
| Appears in Collections: | Journal/Magazine Article |
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| Wang_Dynamic_process_domain.pdf | 1.05 MB | Adobe PDF | View/Open |
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