Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4889
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Mechanical Engineering | - |
dc.creator | Wang, B | - |
dc.creator | Woo, CH | - |
dc.date.accessioned | 2014-12-11T08:24:03Z | - |
dc.date.available | 2014-12-11T08:24:03Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4889 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in B. Wang & C. H. Woo, J. Appl. Phys. 94, 4053 (2003) and may be found at http://link.aip.org/link/?jap/94/4053. | en_US |
dc.subject | Ferroelectric thin films | en_US |
dc.subject | Atomic force microscopy | en_US |
dc.subject | Electric domains | en_US |
dc.subject | Green's function methods | en_US |
dc.subject | Electric fields | en_US |
dc.subject | Dielectric depolarisation | en_US |
dc.title | Atomic force microscopy-induced electric field in ferroelectric thin films | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: C. H. Woo | en_US |
dc.identifier.spage | 4053 | - |
dc.identifier.epage | 4059 | - |
dc.identifier.volume | 94 | - |
dc.identifier.issue | 6 | - |
dc.identifier.doi | 10.1063/1.1603345 | - |
dcterms.abstract | The use of atomic force microscopy (AFM) to tailor and image ferroelectric domains in the submicron and nanometer ranges is gaining increasing attention. Many applications have been developed that make use of the superhigh electric field generated by the sharp AFM tip in a local area. In this article, we derive an explicit expression for the AFM-induced electric field in a ferroelectric thin film. Based on a similar approach, we also obtain the depolarization field created by polarization charges using the Green function technique. Based on the expressions derived, the effects of the substrate are discussed. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 15 Sept. 2003, v. 94, no. 6, p. 4053-4059 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2003-09-15 | - |
dc.identifier.isi | WOS:000185419600056 | - |
dc.identifier.scopus | 2-s2.0-0141990523 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | VoR allowed | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Wang_Atomic_force_microscopy-induced.pdf | 987.38 kB | Adobe PDF | View/Open |
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