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http://hdl.handle.net/10397/4882
| Title: | Growth mode mapping and structural properties of controlled perovskite BaTiO₃/SrTiO₃heterostructure | Authors: | Li, JL Hao, JH Zhang, Y Li, Y |
Issue Date: | 12-Nov-2007 | Source: | Applied physics letters, 12 Nov. 2007, v. 91, no. 20, 201919, p. 1-3 | Abstract: | Perovskite heteroepitaxy was investigated under various conditions using laser molecular beam epitaxy. Well-controlled BaTiO₃/SrTiO₃ heterostructure was studied with in situ reflective high energy electron diffraction and ex situ atomic force microscopy, x-ray diffraction, and transmission electron microscopy. The growth mode map of BaTiO₃ thin films was obtained as a function of substrate temperature under 600 °C for various laser repetition rates. The effective activation energy of surface migration was determined to be 0.33 eV. A mechanism of surface migration in BaTiO₃ heteroepitaxy was described for a basic understanding of atomic-scale controlled preparation of ferroelectric heterostructures at low temperature. | Keywords: | Atomic force microscopy Epitaxial growth Heterojunctions Molecular beam epitaxy Thin films Transmission electron microscopy |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.2815749 | Rights: | © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Long et al., Appl. Phys. Lett. 91, 201919 (2007) and may be found at http://link.aip.org/link/?apl/91/201919 |
| Appears in Collections: | Journal/Magazine Article |
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| Li_Growth_Controlled_Perovskite.pdf | 373.54 kB | Adobe PDF | View/Open |
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