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| Title: | Effects of substrate-induced strain on transport properties of LaMnO[sub 3+δ] and CaMnO₃ thin films using ferroelectric poling and converse piezoelectric effect | Authors: | Zheng, RK Habermeier, H Chan, HLW Choy, CL Luo, HS |
Issue Date: | 1-Mar-2010 | Source: | Physical review. B, Condensed matter and materials physics, 1 Mar. 2010, v. 81, no. 10, 104427, p. 1-9 | Abstract: | We have investigated the effects of the strain induced by ferroelectric poling (or the converse piezoelectric effect) on the transport properties of LaMnO[sub 3+δ] and CaMnO₃ thin films grown on ferroelectric 0.67Pb(Mg[sub 1/3]Nb[sub 2/3])O₃-0.33PbTiO₃ single-crystal substrates. The ferroelectric poling of the substrate gives rise to a reduction in the in-plane tensile strain of the LaMnO[sub 3+δ] film, which results in a significant decrease in the resistance and increase in the insulator-to-metal transition temperature T[sub P] of the film. The ferroelectric poling also leads to opposite effects on the magnetoresistance (MR) below and above T[sub P], namely, MR is reduced for T<T[sub P] while MR is enhanced for T>T[sub P]. These strain effects are explained in terms of coexisting phases whose volume fractions are modified as a result of the reduction in the Jahn-Teller (JT) distortion due to ferroelectric poling. An investigation of the effects of the strain induced by the converse piezoelectric effect on the resistance of the LaMnO[sub 3+δ] and CaMnO₃ films shows that the resistance-strain coefficients (ΔR/R)/(Δc[sub film]/c[sub film]) of the LaMnO[sub 3+δ] film is much larger than those of the CaMnO₃ film. This result may imply that the strain-induced modification of the electronic bandwidth alone cannot account for the large (ΔR/R)/(Δc[sub film]/c[sub film]) observed in the LaMnO[sub 3+δ] film, and highlights that the strong coupling of charge carriers to JT distortion is crucial for understanding the effects of the substrate-induced strain in manganite thin films. | Keywords: | Calcium compounds Jahn-Teller effect Lanthanum compounds Lead compounds Magnesium compounds Magnetoresistance Metal-insulator boundaries Niobium compounds Piezoelectricity Thin films |
Publisher: | American Physical Society | Journal: | Physical review. B, Condensed matter and materials physics | ISSN: | 1098-0121 | EISSN: | 1550-235X | DOI: | 10.1103/PhysRevB.81.104427 | Rights: | Physical Review B © 2010 The American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
| Appears in Collections: | Journal/Magazine Article |
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