Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4781
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Li, DF | - |
dc.creator | Wang, Y | - |
dc.creator | Dai, J | - |
dc.date.accessioned | 2014-12-11T08:28:54Z | - |
dc.date.available | 2014-12-11T08:28:54Z | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4781 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in D. F. Li, Yan Wang, & J. Y. Dai, Appl. Phys. Lett. 98, 122108 (2011) and may be found at http://link.aip.org/link/?apl/98/122108 | en_US |
dc.subject | Carrier mobility | en_US |
dc.subject | Doping profiles | en_US |
dc.subject | Dysprosium compounds | en_US |
dc.subject | Insulating thin films | en_US |
dc.subject | Interface phenomena | en_US |
dc.subject | Interface states | en_US |
dc.subject | Metal-insulator transition | en_US |
dc.subject | Strontium compounds | en_US |
dc.title | Tunable electronic transport properties of DyScO₃/SrTiO₃ polar heterointerface | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: J. Y. Dai | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.volume | 98 | - |
dc.identifier.doi | 10.1063/1.3570694 | - |
dcterms.abstract | Electronic transport properties of DyScO₃/SrTiO₃ polar heterointerface grown at different oxygen pressures are studied. This DyScO₃/SrTiO₃ polar heterointerface exhibits much higher charge mobility, up to 10⁴ cm² V⁻¹ s⁻¹, compared to the LaAlO₃/SrTiO₃ system due to relatively lower lattice mismatch between the film and substrate. More significantly, the DyScO₃ film deposited under 10⁻⁴ mbar oxygen pressure presents an interfacial metal-to-semiconductor conducting mechanism transition at 90 K. Field effect transport measurement results reveal that this transition can be modulated by field effect through controlling the electron doping level of the interface originated from interfacial electronic reconstruction. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Applied physics letters, 21 Mar. 2011, v. 98, 122108, p. 1-3 | - |
dcterms.isPartOf | Applied physics letters | - |
dcterms.issued | 2011-03-21 | - |
dc.identifier.isi | WOS:000288808200045 | - |
dc.identifier.scopus | 2-s2.0-79953866372 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.rosgroupid | r52213 | - |
dc.description.ros | 2010-2011 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
dc.description.oaCategory | VoR allowed | en_US |
Appears in Collections: | Journal/Magazine Article |
Files in This Item:
File | Description | Size | Format | |
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Li_Tunable_Electronic_Transport.pdf | 801.88 kB | Adobe PDF | View/Open |
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