Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4777
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dc.contributorDepartment of Applied Physics-
dc.creatorYang, HY-
dc.creatorYu, SF-
dc.creatorHui, YY-
dc.creatorLau, SP-
dc.date.accessioned2014-12-11T08:28:53Z-
dc.date.available2014-12-11T08:28:53Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4777-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H. Y. Yang et al., Appl. Phys. Lett. 97, 191105 (2010) and may be found at http://link.aip.org/link/?apl/97/191105en_US
dc.subjectAluminium compoundsen_US
dc.subjectElectroluminescenceen_US
dc.subjectElectron trapsen_US
dc.subjectElectron-hole recombinationen_US
dc.subjectHole trapsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectLight emitting diodesen_US
dc.subjectNanofabricationen_US
dc.subjectNanowiresen_US
dc.subjectSemiconductor growthen_US
dc.subjectSemiconductor heterojunctionsen_US
dc.subjectSemiconductor quantum wiresen_US
dc.subjectSilicon compoundsen_US
dc.subjectValence bandsen_US
dc.subjectWide band gap semiconductorsen_US
dc.titleElectroluminescence from AlN nanowires grown on p-SiC substrateen_US
dc.typeJournal/Magazine Articleen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume97-
dc.identifier.issue19-
dc.identifier.doi10.1063/1.3513308-
dcterms.abstractAluminum nitride (AlN) nanowires were prepared by the carbothermal reduction method. A heterojunction light-emitting diode (LED) was fabricated by depositing randomly aligned AlN nanowires onto p-type 4H–SiC substrate. When a forward bias voltage greater than 8 V was applied to the LED, a broad band emission peaked at 417 nm could be observed. The peak deconvolution revealed four emission peaks at ∼ 400, 420, 468, and 525 nm. These emission peaks may be attributed to the radiative recombination between electrons from trap-level states and holes from the valence band of the AlN nanowires.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 8 Nov. 2010, v. 97, no. 19, 191105, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2010-11-08-
dc.identifier.isiWOS:000284169900005-
dc.identifier.scopus2-s2.0-78249241224-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr55849-
dc.description.ros2010-2011 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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