Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4627
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dc.contributorDepartment of Applied Physics-
dc.creatorLuo, Z-
dc.creatorHao, JH-
dc.creatorGao, J-
dc.date.accessioned2014-12-11T08:24:40Z-
dc.date.available2014-12-11T08:24:40Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10397/4627-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z. Luo, J. H. Hao & J. Gao, Appl. Phys. Lett. 91, 062105 (2007) and may be found at http://link.aip.org/link/?apl/91/062105en_US
dc.subjectp-n heterojunctionsen_US
dc.subjectRectificationen_US
dc.subjectSpace-charge-limited conductionen_US
dc.subjectStrontium compoundsen_US
dc.titleRectifying characteristics and transport behavior of SrTiO[sub3−δ]110/p-Si (100) heterojunctionsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: Z. Luoen_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.identifier.volume91-
dc.identifier.issue6-
dc.identifier.doi10.1063/1.2767999-
dcterms.abstractIntroducing oxygen vacancy causes the dielectric insulator SrTiO₃ to evolve to a n-type semiconductor. The authors have fabricated n-SrTiO[sub 3−δ](110)/p-Si (100) heterojunctions, showing clear rectifying characteristics at different temperatures from 100 to 292 K. A forward-to-reverse bias ratio of about 1200 was found at V = ±2 V for the p-n junction operated at T = 292 K. The current-voltage characteristic follows I∝exp(eV/ηkT) for the p-n junction at relatively low forward-bias voltage, while the relation of I ∼ V¹∙⁹ describes the transport behavior of p-n junction at relatively high forward-bias voltage. The measured results have been discussed in Anderson model and space charge limited model.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationApplied physics letters, 6 Aug. 2007, v. 91, no. 6, 062105, p. 1-3-
dcterms.isPartOfApplied physics letters-
dcterms.issued2007-08-06-
dc.identifier.isiWOS:000248661400062-
dc.identifier.scopus2-s2.0-34547850727-
dc.identifier.eissn1077-3118-
dc.identifier.rosgroupidr36981-
dc.description.ros2007-2008 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
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