Simulation of interface dislocations effect on polarization distribution of ferroelectric thin films

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4625

Title:	Simulation of interface dislocations effect on polarization distribution of ferroelectric thin films
Authors:	Zheng, Y Wang, B Woo, CH
Issue Date:	27-Feb-2006
Source:	Applied physics letters, 27 Feb. 2006, v. 88, no. 9, 092903, p. 1-3
Abstract:	Effects of interfacial dislocations on the properties of ferroelectric thin films are investigated, using the dynamic Ginzburg–Landau equation. Our results confirm the existence of a dead layer near the film/substrate interface. Due to the combined effects of the dislocations and the near-surface eigenstrain relaxation, the ferroelectric properties of about one-third of the film volume suffers.
Keywords:	Ferroelectric thin films Dielectric polarisation Dislocations Finite difference methods Ginzburg-Landau theory Dielectric relaxation
Publisher:	American Institute of Physics
Journal:	Applied physics letters
ISSN:	0003-6951
EISSN:	1077-3118
DOI:	10.1063/1.2177365
Rights:	© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Zheng, B. Wang & C. H. Woo, Appl. Phys. Lett. 88, 092903 (2006) and may be found at http://link.aip.org/link/?apl/88/092903
Appears in Collections:	Journal/Magazine Article

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