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http://hdl.handle.net/10397/4624
| Title: | Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors | Authors: | Yan, F Migliorato, P Ishihara, R |
Issue Date: | 13-Aug-2007 | Source: | Applied physics letters, 13 Aug. 2007, v. 91, no. 7, 073509, p. 1-3 | Abstract: | The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with the increase of the angle between the normal direction of the twin boundary and the channel direction. A single twin boundary in contact with the drain can lead to higher leakage current because electron-hole generation is greatly enhanced by the trap states in the twin boundary. | Keywords: | Electron-hole recombination Elemental semiconductors Leakage currents Semiconductor device models Silicon Thin film transistors Twin boundaries |
Publisher: | American Institute of Physics | Journal: | Applied physics letters | ISSN: | 0003-6951 | EISSN: | 1077-3118 | DOI: | 10.1063/1.2769951 | Rights: | © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in F. Yan, P. Migliorato, & R. Ishihara, Appl. Phys. Lett. 91, 073509 (2007) and may be found at http://link.aip.org/link/?apl/91/073509 |
| Appears in Collections: | Journal/Magazine Article |
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|---|---|---|---|---|
| Yan_Twin_Boundary_Film.pdf | 198.25 kB | Adobe PDF | View/Open |
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