X-ray diffraction and Raman scattering study of SrBi₂Ta₂O₉ ceramics and thin films with Bi₃TiNbO₉ addition

Abstract

Good ferroelectric properties have previously been reported for both the (1-x)SrBi₂Ti₂O[sub 9]-xBi₃TiNbO[sub 9] bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi₃TiNbO[sub 9] into SrBi₂Ta₂O[sub 9] bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta-O(4) or Ta-O(5) ions are the origin for the good ferroelectric properties of (1-x)SrBi₂Ta₂O[sub 9]-xBi₃TiNbO[sub 9] with x=0.3-0.4.