Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/4579
PIRA download icon_1.1View/Download Full Text
DC FieldValueLanguage
dc.contributorDepartment of Applied Physics-
dc.creatorZheng, CC-
dc.creatorXu, SJ-
dc.creatorNing, JQ-
dc.creatorChen, YN-
dc.creatorLu, XH-
dc.creatorLing, C-
dc.creatorChe, CM-
dc.creatorGao, G-
dc.creatorHao, JH-
dc.creatorBrauer, G-
dc.creatorAnwand, W-
dc.date.accessioned2014-12-11T08:24:10Z-
dc.date.available2014-12-11T08:24:10Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10397/4579-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C.C. Zheng et al., J. Appl. Phys. 110, 083102 (2011) and may be found at http://link.aip.org/link/?jap/110/083102.en_US
dc.subjectCopperen_US
dc.subjectHeliumen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectIon implantationen_US
dc.subjectLight polarisationen_US
dc.subjectNanofabricationen_US
dc.subjectNanostructured materialsen_US
dc.subjectNonlinear optical susceptibilityen_US
dc.subjectOptical harmonic generationen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectX-ray diffractionen_US
dc.subjectZincen_US
dc.subjectZinc compoundsen_US
dc.titleIon-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystalsen_US
dc.typeJournal/Magazine Articleen_US
dc.description.otherinformationAuthor name used in this publication: G. Y. Gaoen_US
dc.identifier.spage1-
dc.identifier.epage6-
dc.identifier.volume110-
dc.identifier.issue8-
dc.identifier.doi10.1063/1.3651379-
dcterms.abstractSecond harmonic generation (SHG) and X-ray diffraction rocking curves of high-quality ZnO single crystals implanted by different ions (He, Cu, and Zn) were investigated. Interestingly, it was found that both He- and Zn-implanted samples show a convinced increment in SHG efficiency while the Cu-implanted one does not. X-ray diffraction rocking curves of the samples show satellite structures, and the simulations firmly reveal the formation of quasi-interfaces inside He- and Zn-implanted crystals. These quasi-interfaces lead to SHG improvement in the two samples. Polarization dependence of SHG of the samples on the excitation light also evidences this conclusion.-
dcterms.accessRightsopen accessen_US
dcterms.bibliographicCitationJournal of applied physics, 15 Oct. 2011, v. 110, no. 8, 083102, p. 1-6-
dcterms.isPartOfJournal of applied physics-
dcterms.issued2011-10-15-
dc.identifier.isiWOS:000296519900003-
dc.identifier.scopus2-s2.0-80655141863-
dc.identifier.eissn1089-7550-
dc.identifier.rosgroupidr56977-
dc.description.ros2011-2012 > Academic research: refereed > Publication in refereed journal-
dc.description.oaVersion of Recorden_US
dc.identifier.FolderNumberOA_IR/PIRAen_US
dc.description.pubStatusPublisheden_US
Appears in Collections:Journal/Magazine Article
Files in This Item:
File Description SizeFormat 
2521.pdf320.77 kBAdobe PDFView/Open
Open Access Information
Status open access
File Version Version of Record
Access
View full-text via PolyU eLinks SFX Query
Show simple item record

Page views

114
Last Week
0
Last month
Citations as of Jun 26, 2022

Downloads

127
Citations as of Jun 26, 2022

SCOPUSTM   
Citations

6
Last Week
0
Last month
0
Citations as of Jun 23, 2022

WEB OF SCIENCETM
Citations

6
Last Week
0
Last month
0
Citations as of Jun 23, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.