Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/4579
DC Field | Value | Language |
---|---|---|
dc.contributor | Department of Applied Physics | - |
dc.creator | Zheng, CC | - |
dc.creator | Xu, SJ | - |
dc.creator | Ning, JQ | - |
dc.creator | Chen, YN | - |
dc.creator | Lu, XH | - |
dc.creator | Ling, C | - |
dc.creator | Che, CM | - |
dc.creator | Gao, G | - |
dc.creator | Hao, JH | - |
dc.creator | Brauer, G | - |
dc.creator | Anwand, W | - |
dc.date.accessioned | 2014-12-11T08:24:10Z | - |
dc.date.available | 2014-12-11T08:24:10Z | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10397/4579 | - |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C.C. Zheng et al., J. Appl. Phys. 110, 083102 (2011) and may be found at http://link.aip.org/link/?jap/110/083102. | en_US |
dc.subject | Copper | en_US |
dc.subject | Helium | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | Ion implantation | en_US |
dc.subject | Light polarisation | en_US |
dc.subject | Nanofabrication | en_US |
dc.subject | Nanostructured materials | en_US |
dc.subject | Nonlinear optical susceptibility | en_US |
dc.subject | Optical harmonic generation | en_US |
dc.subject | Wide band gap semiconductors | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | Zinc | en_US |
dc.subject | Zinc compounds | en_US |
dc.title | Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystals | en_US |
dc.type | Journal/Magazine Article | en_US |
dc.description.otherinformation | Author name used in this publication: G. Y. Gao | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 6 | - |
dc.identifier.volume | 110 | - |
dc.identifier.issue | 8 | - |
dc.identifier.doi | 10.1063/1.3651379 | - |
dcterms.abstract | Second harmonic generation (SHG) and X-ray diffraction rocking curves of high-quality ZnO single crystals implanted by different ions (He, Cu, and Zn) were investigated. Interestingly, it was found that both He- and Zn-implanted samples show a convinced increment in SHG efficiency while the Cu-implanted one does not. X-ray diffraction rocking curves of the samples show satellite structures, and the simulations firmly reveal the formation of quasi-interfaces inside He- and Zn-implanted crystals. These quasi-interfaces lead to SHG improvement in the two samples. Polarization dependence of SHG of the samples on the excitation light also evidences this conclusion. | - |
dcterms.accessRights | open access | en_US |
dcterms.bibliographicCitation | Journal of applied physics, 15 Oct. 2011, v. 110, no. 8, 083102, p. 1-6 | - |
dcterms.isPartOf | Journal of applied physics | - |
dcterms.issued | 2011-10-15 | - |
dc.identifier.isi | WOS:000296519900003 | - |
dc.identifier.scopus | 2-s2.0-80655141863 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.rosgroupid | r56977 | - |
dc.description.ros | 2011-2012 > Academic research: refereed > Publication in refereed journal | - |
dc.description.oa | Version of Record | en_US |
dc.identifier.FolderNumber | OA_IR/PIRA | en_US |
dc.description.pubStatus | Published | en_US |
Appears in Collections: | Journal/Magazine Article |
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