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http://hdl.handle.net/10397/4576
| Title: | Twin-variant reorientation-induced large magnetoresistance effect in Ni₅₀Mn₂₉Ga₂₁ single crystal | Authors: | Zeng, M Or, DSW Zhu, Z Ho, SL |
Issue Date: | 1-Sep-2010 | Source: | Journal of applied physics, 1 Sept. 2010, v. 108, no. 5, 053716, p. 1-4 | Abstract: | We report a significant magnetoresistance (MR) effect arisen from magnetic field-induced reorientation of martensitic twin variants in a ferromagnetic shape memory Ni₅₀Mn₂₉Ga₂₁ single crystal. The measured electrical resistivity shows large anisotropy and the measured MR value is as large as 25% over the wide temperature range of 230-315 K at a moderate magnetic field of 1.2 T. It is found that a proper combination of the initial state of martensitic twin variants and the direction and magnitude of applied magnetic field can give rise to either positive or negative MR value of ~25%, thus allowing a periodic modulation of the MR effect in response to varying the spatial angle between the directions of applied magnetic field and electric current for every 180°. | Keywords: | Electric current Electrical resistivity Gallium alloys Magnetic anisotropy Magnetoresistance Manganese alloys Nickel alloys |
Publisher: | American Institute of Physics | Journal: | Journal of applied physics | ISSN: | 0021-8979 | EISSN: | 1089-7550 | DOI: | 10.1063/1.3480794 | Rights: | © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. Zeng et al., J. Appl. Phys. 108, 053716 (2010) and may be found at http://link.aip.org/link/?jap/108/053716. |
| Appears in Collections: | Journal/Magazine Article |
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